Publications

• Communication dans un congrès

Modeling of the static behavior in two InGaAsP laterally coupled semiconductor diode lasers

M. Leones, H. Lamela, H. Rivera, Jean-Pierre Vilcot, A. Idjeri

2000, pp.319-327. ⟨hal-00158599⟩

• Communication dans un congrès

Microrobot autonome

Philippe Basset, A. Kaiser, L. Buchaillot, P. Masquelier

Actes des 3èmes Journées Nationales du Réseau Doctoral de Microélectronique, 2000, Montpellier, France. ⟨hal-00158520⟩

• Communication dans un congrès

Theoretical limits for signal reflections due to inductance for on-chip interconnections

Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht, Gregory Servel

2000, pp.55-60. ⟨hal-00158603⟩

• Article dans une revue

Excitonic and quasiparticle gaps on Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

Physical Review Letters, 2000, 84, pp.2457-2460. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158640⟩

• Communication dans un congrès

Transmission line analysis via THz photoconductive sampling

Jean-Francois Lampin, F. Mollot

International Terahertz Workshop, 2000, Sandbjerg, Denmark. ⟨hal-00158448⟩

• Communication dans un congrès

1 W/mm GaAs PHEMT for realization of linear power amplifier in the K band

X. Hue, E. Rogeaux, J.L. Cazaux, Alain Mallet, L. Lapierre, B. Boudart, B. Bonte, Y. Crosnier

2000, pp.228-231. ⟨hal-00158977⟩

• Communication dans un congrès

Silicon nitride passivation on GaN MESFET's

Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, Jean-Claude de Jaeger, F. Omnes

2000, pp.VIII-11, VIII-12. ⟨hal-00159001⟩

• Communication dans un congrès

Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate

N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, S. Bollaert, Y. Cordier, D. Theron, A. Cappy

2000, 10 pp. ⟨hal-00159003⟩

• Autre publication scientifique

Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence

S. Trassaert

2000. ⟨hal-00158975⟩

• Communication dans un congrès

First results of GaN MESFET's realized on (111) Si

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩