Publications

• Proceedings/Recueil des communications

Resonant phonons in adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

After a brief review on surface phonons, we focus on resonant phonons in adsorbed thin 1ayers. Such resonances may in general be understood within the substrate bulk band as thin layer modes shiften and broaden by the i n t e r a c t i o n w i t h t h e s u b s t r a t e p h o n o n s. T h e s e r…

Acta Physica Polonica A, 89 (2), pp.139-144, 1996, ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070920⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. II. The quantum regime

Z. Bougrioua, J. Farvacque, D. Ferre

This article deals with the influence of dislocations on the conductivity of two dimensional electron gas measured at helium temperature and at high magnetic field. Two kinds of dislocation substructures have been experimentally studied: they correspond either to a family of parallel dislocation…

Journal of Applied Physics, 1996, 79 (3), pp.1546-1555. ⟨10.1063/1.360998⟩. ⟨hal-02415036⟩

• Article dans une revue

Resonant Phonons in Adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

Acta Physica Polonica A, 1996, 89 (2), pp.139-144. ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070831⟩

• Article dans une revue

Sharp resonant phonons in two adsorbed slabs

Abdellatif Akjouj, E.H El Boudouti, B Sylla, B Djafari-Rouhani, Leonard Dobrzynski

Solid State Communications, 1996, 97 (7), pp.611-616. ⟨10.1016/0038-1098(95)00735-0⟩. ⟨hal-04070867⟩

• Article dans une revue

Elastic Vibrations of Planar and Deterministic Rough Surfaces

B. Djafari Rouhani, A. Khelif, E.H. El Boudouti, Abdellatif Akjouj, Leonard Dobrzynski

Acta Physica Polonica A, 1996, 89 (2), pp.129-137. ⟨10.12693/APhysPolA.89.129⟩. ⟨hal-04070834⟩

• Communication dans un congrès

-low temperature GaAs/GaInP FET: device technology and characterization

Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, Henri Gérard, Georges Salmer, M. Lipka, R. Westphalen, Erhard Kohn

Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. ⟨hal-01654286⟩

• Article dans une revue

Magnon band structure of periodic composites

Jerome O. Vasseur, L. Dobrzynski, Bahram Djafari-Rouhani, H. Puszkarski

We calculate the spin-wave spectra of two-dimensional composite materials consisting of periodic square arrays of parallel cylinders made of a ferromagnetic material embedded in a ferromagnetic background. Each material is described by its spontaneous magnetization MS and exchange constant A. An…

Physical Review B, 1996, 54 (2), pp.1043-1049. ⟨10.1103/PhysRevB.54.1043⟩. ⟨hal-03301165⟩

• Article dans une revue

Coplanar waveguides on dielectric membranes micromachined on GaAs substrate

Patrice Salzenstein, Olivier Dupuis, Mohamed Helal, Eric Lheurette, Olivier Vanbésien, Patrick Mounaix, Didier Lippens

GaAs micromachining technology was used for fabricating coplanar transmission lines on Si3N4 and polyimide membranes deposited on GaAs substrates. On-wafer measurements of scattering parameters up to 75 GHz for several line configurations show a constant phase velocity of 2.9E8 m/s and a…

Electronics Letters, 1996, 32, pp.821-822. ⟨hal-00076886⟩

• Article dans une revue

High performance InP-based heterostructure barrier varactors in single and stack configuration

Eric Lheurette, Patrick Mounaix, Patrice Salzenstein, Francis Mollot, Didier Lippens

Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As bolocking conductionlayers have been fabricated and characterized. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm² at 12V, a…

Electronics Letters, 1996, 32, pp.1417-1418. ⟨hal-00076889⟩

• Article dans une revue

Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel

P.-H. Bricout, Emmanuel Dubois

Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is…

IEEE Transactions on Electron Devices, 1996, 43 (8), pp.1251-1255. ⟨10.1109/16.506776⟩. ⟨hal-04246714⟩