Publications

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four…

Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03689782⟩

• Article dans une revue

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

S. Arscott, R. Miles, J. Kennedy, S. Milne

Journal of Materials Research, 1999, 14 (2), pp.494-499. ⟨10.1557/JMR.1999.0070⟩. ⟨hal-02348064⟩

• Article dans une revue

Theoretical reflexion coefficient of metal grid reflectors at a dielectric boundary

Ronan Sauleau, Daniel Thouroude, Philippe Coquet, J.P. Daniel

International Journal of Infrared and Millimeter Waves, 1999, 20 (2), 325-340 - 16 p. ⟨hal-00557636⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four…

Microelectronics Reliability, 1999, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03674374⟩

• Communication dans un congrès

Nanometer scale Lithography on Silicon, Titanium and PMMA resist

Emmanuel Dubois, Jean-Luc Bubendorff

E-MRS Materials and Processes for Submicron Technologies, vol. 89, p. 1085-1089, Editors J.M. Martinez- Duart, R. Madar, R.A. Levy, 1999, 1999, Strasbourg, France. ⟨hal-04249216⟩

• Communication dans un congrès

Very high selective wet etching application to the uniformity improvement of linear power PHEMT

X. Hue, B. Boudart, Bertrand Bonte, Y. Crosnier

23th Workshop On Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), 1999, Chantilly, France. ⟨hal-01654299⟩

• Communication dans un congrès

EAO des circuits microondes en régime temporel : approche physique

Christophe Dalle, M.R. Friscourt

11èmes Journées Nationales Microondes, 1999, Arcachon, France. ⟨hal-00005311⟩

• Article dans une revue

Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical and carrier transport physical coupled models

Stéphane Beaussart, Oliver Perrin, Marie-Renée Friscourt, Christophe Dalle

The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier transport physical models. The model has been used to study the high-power…

IEEE Transactions on Microwave Theory and Techniques, 1999, 47, pp.929-934. ⟨10.1109/22.769328⟩. ⟨hal-00005341⟩

• Article dans une revue

Terahertz time-domain spectroscopy of films fabricated from SU-8

S. Arscott, F. Garet, P. Mounaix, L. Duvillaret, J.-L. Coutaz, D. Lippens

Electronics Letters, 1999, 35 (3), pp.243. ⟨10.1049/el:19990146⟩. ⟨hal-02348056⟩

• Proceedings/Recueil des communications

Modeling and Optimisation of Optoelectronics devices

Joseph Harari, Vincent Magnin

The aim of this paper is to present modeling and optimisation methods to be applied in optoelectronics. We do not consider the case of laser. At first, we present the main modeling methods that we used to simulate the device optical and electrical behaviour. Secondly we tackle with the interesting…

29th European Solid-State Device Research Conference (ESSDERC'99), IEEE, 1999, 2-86332-245-1. ⟨hal-04449542⟩