Publications

• Article dans une revue

Terahertz time-domain spectroscopy of films fabricated from SU-8

S. Arscott, F. Garet, P. Mounaix, L. Duvillaret, J.-L. Coutaz, D. Lippens

Electronics Letters, 1999, 35 (3), pp.243. ⟨10.1049/el:19990146⟩. ⟨hal-02348056⟩

• Communication dans un congrès

High linearity of double channel GaAs PHEMT using a very high selective wet etching

X. Hue, B Boudart, Bertrand Bonte, Y. Crosnier

GAAS 99, 1999, Munich, Germany. ⟨hal-01649420⟩

• Article dans une revue

Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

M. V Wolkin, Jacob Jorne, P. M Fauchet, Guy Allan, Christophe Delerue

Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to oxygen, the PL shifts to the red by as much as 1 eV. This shift and the…

Physical Review Letters, 1999, 82 (1), pp.197-200. ⟨10.1103/PhysRevLett.82.197⟩. ⟨hal-03314703⟩

• Article dans une revue

Noise analysis in devices under nonlinear operation

A. Cappy, Francois Danneville, Gilles Dambrine, Beaudouin Tamen

Solid-State Electronics, 1999, 43 (1), pp.21-26. ⟨10.1016/S0038-1101(98)00261-5⟩. ⟨hal-03612812⟩

• Article dans une revue

High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Gilles Dambrine, J.-P. Raskin, Francois Danneville, D. Vanhoenackel Janvier, J.-P. Colinge, A. Cappy

IEEE Transactions on Electron Devices, 1999, 46 (8), pp.1733-1741. ⟨10.1109/16.777164⟩. ⟨hal-03612809⟩

• Article dans une revue

Electromagnetic waves in finite superlattices with buffer and cap layers

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, M. Hammouchi, E. El Boudouti, A. Nougaoui

Journal of the Optical Society of America. A Optics, Image Science, and Vision, 1999, 16 (7), pp.1703. ⟨10.1364/JOSAA.16.001703⟩. ⟨hal-04070498⟩

• Article dans une revue

Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy

Emmanuel Dubois, Jean-Luc Bubbendorff

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) nanolithography techniques based on local oxidation of silicon/titanium and electron beam exposure of PMMA are described. It is shown that a 10 nm resolution can routinely be achieved using tapping-mode AFM-based anodization of…

Solid-State Electronics, 1999, 43 (6), pp.1085-1089. ⟨10.1016/S0038-1101(99)00029-5⟩. ⟨hal-04246744⟩

• Article dans une revue

Transferred InP-based HBVs on glass substrate

S. Arscott, P. Mounaix, D. Lippens

Electronics Letters, 1999, 35 (17), pp.1493. ⟨10.1049/el:19990984⟩. ⟨hal-02348069⟩

• Communication dans un congrès

Large signal and pulse instabilities in GaN HFETs

Erhard Kohn, E Strobel, I. Daumiller, Christophe Gaquière, B. Boudart, Didier Theron, N.X. Nguyen, C.N. Nguyen

1st Gallium Nitride Electronic Device Workshop, 1999, Cornell, United States. ⟨hal-01654323⟩

• Article dans une revue

Trap effects studies in GaN MESFETs by pulsed measurements

S. Trassaert, B. Boudart, Christophe Gaquière, Didier Theron, Y. Crosnier, F. Huet, M.A. Poisson

Electronics Letters, 1999, 35 (16), ⟨10.1049/el:19990887⟩. ⟨hal-01647642⟩