Publications

• Communication dans un congrès

Growth of low temperature GaAs on GaAs under different conditions

Didier Theron, B. Boudart, R. Westphalen, Xavier Wallart, Y. Druelle

3rd European Workshop on Heterostructure Technology (HETECH), 1993, Villeneuve d'Ascq, France. ⟨hal-01654281⟩

• Communication dans un congrès

The theory of rare-earth impurities in semiconductors

Christophe Delerue, Michel Lannoo

MRS 1993 Spring Meeting, 1993, San Francisco, United States. ⟨hal-03316744⟩

• Article dans une revue

Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTs

Henri Happy, Gilles Dambrine, Jocelyn Alamkan, Francois Danneville, François Kaptche-Tagne, A. Cappy

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1993, 3 (1), pp.14-28. ⟨10.1002/mmce.4570030105⟩. ⟨hal-03317740⟩

• Chapitre d'ouvrage

DISPERSION OF LONGITUDINAL ULTRASONIC WAVE VELOCITY THROUGH CARBON-EPOXY COMPOSITE MATERIALS.

Mohamed Ourak, Mohammadi Ouaftouh, Jean-Michel Rouvaen, Bertrand Nongaillard, C. Bruneel

Ultrasonics International 93, Elsevier, pp.435-438, 1993, ⟨10.1016/b978-0-7506-1877-9.50108-6⟩. ⟨hal-03811463⟩

• Communication dans un congrès

Temperature measurements of LT-GaAs diodes

R. Westphalen, B. Boudart, Didier Theron, Xavier Wallart, Y. Druelle, Y. Crosnier

European Materials Research Society, 1993, Strasbourg, France. ⟨hal-01648117⟩

• Article dans une revue

Luminescence of silicon crystallites

C. Delerue, E. Martin, Jean-Francois Lampin, G. Allan, M. Lannoo

The physical origin of the red and infrared light emissions from porous silicon are examined. The red band can come from the direct radiative recombination of excitons in silicon crystallites. The infrared emission can be explained by their recombination on silicon dangling bonds. Finally, the…

Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-359-C5-362. ⟨10.1051/jp4:1993575⟩. ⟨jpa-00251662⟩

• Article dans une revue

Effect of the character of high-angle grain boundaries on segregation: An elastic model

Jerome O. Vasseur, P.A. Deymier

Interface Science, 1993, 1 (2), ⟨10.1007/BF00203601⟩. ⟨hal-03301130⟩

• Article dans une revue

A new method for on wafer noise measurement

Gilles Dambrine, H. Happy, Francois Danneville, A. Cappy

IEEE Transactions on Microwave Theory and Techniques, 1993, 41 (3), pp.375-381. ⟨10.1109/22.223734⟩. ⟨hal-03317745⟩

• Communication dans un congrès

The theory of rare-earth impurities in semiconductors

Christophe Delerue, Michel Lannoo, Guy Allan

17th International Conference on Defects in Semiconductors, 1993, Gmunden, Austria. ⟨hal-03316748⟩

• Article dans une revue

Acoustic band structure of periodic elastic composites

M. Kushwaha, P. Halevi, L. Dobrzynski, B. Djafari-Rouhani

We present the first full band-structure calculations for periodic, elastic composites. For transverse polarization of the vibrations we obtain a ‘‘phononic’’ band gap which extends throughout the Brillouin zone. A complete acoustic gap or a low density of states should have important consequences…

Physical Review Letters, 1993, 71 (13), pp.2022-2025. ⟨10.1103/PhysRevLett.71.2022⟩. ⟨hal-04069292⟩