Publications

• Communication dans un congrès

Modélisation de phototransistors bipolaires à hétérojonction Inp/InGaAs de type guide d'onde

V. Magnin, Joseph Harari, G.H. Jin, M.R. Friscourt, Christophe Dalle, P.A. Rolland, Jean-Pierre Vilcot, Didier Decoster

6émes Journées Nationales Microélectronique et Optoélectronique III-V, 1997, Chantilly, France. ⟨hal-00005302⟩

• Article dans une revue

Anomalous exponent in the kinetics of grain growth with anisotropic interfacial energy

P. Deymier, J. Vasseur, Leonard Dobrzynski

Physical Review B, 1997, 55 (1), pp.205-211. ⟨10.1103/PhysRevB.55.205⟩. ⟨hal-04070816⟩

• Article dans une revue

Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation

Didier Stiévenard, Paul-Aymeric Fontaine, Emmanuel Dubois

The formation of a nanometer-size oxide pattern on silicon using a scanning probe microscope (SPM) has been widely reported in the literature. No analytical model has been proposed, however, to explain the variation of the oxide height with both polarization and speed of the SPM tip. In this letter…

Applied Physics Letters, 1997, 70 (24), pp.3272-3274. ⟨10.1063/1.118425⟩. ⟨hal-04246734⟩

• Chapitre d'ouvrage

Porous silicon modelled as idealised quantum dots

Christophe Delerue, Michel Lannoo, Guy Allan

CANHAM L. Properties of porous silicon, The Institution of Electrical Engineers, London, UK, pp.212, 1997. ⟨hal-00132027⟩

• Communication dans un congrès

La diode Gunn planaire à injection MESFET, un nouveau composant pour l'optoélectronique ?

F. Driouch, M.R. Friscourt, Christophe Dalle

6émes Journées Nationales Microélectronique et Optoélectronique III-V, 1997, Chantilly, France. ⟨hal-00005304⟩

• Communication dans un congrès

Systems of silicon nanocrystallites: from optical to transport properties

Christophe Delerue, Guy Allan, Michel Lannoo

International Materials Research Congress, Cancun’97, 1997, Cancun, Mexico. ⟨hal-03316860⟩

• Article dans une revue

Anomalous exponent in the kinetics of grain growth with anisotropic interfacial energy

P. Deymier, Jerome O. Vasseur, L. Dobrzynski

Physical Review B, 1997, 55 (1), pp.205-211. ⟨10.1103/PhysRevB.55.205⟩. ⟨hal-03301120⟩

• Communication dans un congrès

Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs

Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, B. Splingart, Erhard Kohn

IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997, londres, United Kingdom. ⟨hal-01649377⟩

• Article dans une revue

Elastic relaxation of coherent epitaxial deposits

Kern Raymond, Pierre Müller, P. Muller, R Kern

The epitaxial contact between a three-dimensional (3D) deposited crystal A and its lattice mismatched substrate B may be coherent and remain coherent during the elastic relaxation of the 3D crystal. In this case, during the relaxation, the 3D crystal drags the atoms of the contact area and produces…

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1997, 392, pp.103 - 133. ⟨hal-01967030⟩

• Communication dans un congrès

Realization of viaholes for InP millimeter wave devices by wet chemical etching using bromine/methanol

S. Trassaert, B. Boudart, Stephane Piotrowicz, Y. Crosnier

7th European Workshop on Heterostructure Technology (HETECH), 1997, Julich, Germany. ⟨hal-01654288⟩