Publications

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

Z. Bougrioua, J. Farvacque, D. Ferre

This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through the potential associated with their linear electric charge and not with…

Journal of Applied Physics, 1996, 79 (3), pp.1536-1545. ⟨10.1063/1.360997⟩. ⟨hal-02415041⟩

• Proceedings/Recueil des communications

Resonant phonons in adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

After a brief review on surface phonons, we focus on resonant phonons in adsorbed thin 1ayers. Such resonances may in general be understood within the substrate bulk band as thin layer modes shiften and broaden by the i n t e r a c t i o n w i t h t h e s u b s t r a t e p h o n o n s. T h e s e r…

Acta Physica Polonica A, 89 (2), pp.139-144, 1996, ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070920⟩

• Article dans une revue

Extraction method of the base series resistances in bipolar transistor in presence of current crowding

Emmanuel Dubois, P.H. Bricout, E. Robilliart

This paper proposes a new method to determine the base resistance components and the base sheet resistance under forward bias conditions and in the presence of current crowding. Using bipolar transistors with two independent base contacts, the base sheet resistance R<sub>&square; </sub…

IEEE Journal of Solid-State Circuits, 1996, 31 (1), pp.132-135. ⟨10.1109/4.485876⟩. ⟨hal-04246698⟩

• Article dans une revue

Resonant Phonons in Adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

Acta Physica Polonica A, 1996, 89 (2), pp.139-144. ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070831⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. II. The quantum regime

Z. Bougrioua, J. Farvacque, D. Ferre

This article deals with the influence of dislocations on the conductivity of two dimensional electron gas measured at helium temperature and at high magnetic field. Two kinds of dislocation substructures have been experimentally studied: they correspond either to a family of parallel dislocation…

Journal of Applied Physics, 1996, 79 (3), pp.1546-1555. ⟨10.1063/1.360998⟩. ⟨hal-02415036⟩

• Article dans une revue

Sharp resonant phonons in two adsorbed slabs

Abdellatif Akjouj, E.H El Boudouti, B Sylla, B Djafari-Rouhani, Leonard Dobrzynski

Solid State Communications, 1996, 97 (7), pp.611-616. ⟨10.1016/0038-1098(95)00735-0⟩. ⟨hal-04070867⟩

• Article dans une revue

Elastic Vibrations of Planar and Deterministic Rough Surfaces

B. Djafari Rouhani, A. Khelif, E.H. El Boudouti, Abdellatif Akjouj, Leonard Dobrzynski

Acta Physica Polonica A, 1996, 89 (2), pp.129-137. ⟨10.12693/APhysPolA.89.129⟩. ⟨hal-04070834⟩

• Communication dans un congrès

-low temperature GaAs/GaInP FET: device technology and characterization

Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, Henri Gérard, Georges Salmer, M. Lipka, R. Westphalen, Erhard Kohn

Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. ⟨hal-01654286⟩

• Communication dans un congrès

Usinage de membranes diélectriques sur GaAs: applications aux structures coplanaires suspendues

Patrice Salzenstein, Olivier Dupuis, Eric Lheurette

Actes de la 3e Journée Nationale Microtechnologies, Lyon, 25 Mars 1996, 1996, France. pp.112-113. ⟨hal-00076914⟩

• Article dans une revue

Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel

P.-H. Bricout, Emmanuel Dubois

Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is…

IEEE Transactions on Electron Devices, 1996, 43 (8), pp.1251-1255. ⟨10.1109/16.506776⟩. ⟨hal-04246714⟩