Publications

• Article dans une revue

Dynamics of thin epitaxial layers on (001) surfaces of bcc metals: A Green-function approach

P. Zieliński, Leonard Dobrzynski

Physical Review B, 1990, 41 (15), pp.10377-10386. ⟨10.1103/PhysRevB.41.10377⟩. ⟨hal-04070516⟩

• Article dans une revue

Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures

Pierre Dansas, Daniel Pascal, C. Bru-Chevallier, S. Laval, L. Giraudet, M. Allovon

Journal of Applied Physics, 1990, 67 (3), pp.1384-1388. ⟨hal-01977062⟩

• Article dans une revue

Image-potential states at surfaces and in tunnel junctions

Cz. Oleksy, Abdellatif Akjouj, Leonard Dobrzynski

We report a theoretical study of image-potential states at a (001) surface of Ag, done with the help of a simple tight-binding model having an electronic band of finite width. The wave function associated with these states is calculated at the center of the two-dimensional (2D) Brillouin zone. The…

Physical Review B: Condensed Matter (1978-1997), 1990, 42 (2), pp.1163-1167. ⟨10.1103/PhysRevB.42.1163⟩. ⟨hal-04070837⟩

• Autre publication scientifique

Etude du comportement de limiteurs à diodes PIN

Christophe Dalle, P.A. Rolland, M.R. Friscourt

1990. ⟨hal-00005290⟩

• Article dans une revue

A study of the electrical performances of isolation structures

Emmanuel Dubois, J.-L. Coppee, B. Baccus, D. Collard

The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation of an analytical formulation of the subthreshold current. The current…

IEEE Transactions on Electron Devices, 1990, 37 (6), pp.1477-1486. ⟨10.1109/16.106243⟩. ⟨hal-04246652⟩

• Article dans une revue

Efficient two-dimensional multilayer process simulation of advanced bipolar devices

Bruno Baccus, Emmanuel Dubois, Dominique Collard, Denis Morel

In order to study advanced bipolar transistors including several polysilicon layers and U-groove isolation, a dedicated two-dimensional multilayer process simulator, IMPACT4, has been developed. From the simulation point of view, the new aspects introduced by these devices, namely the multilayer…

Solid-State Electronics, 1989, 32 (11), pp.1013-1023. ⟨10.1016/0038-1101(89)90165-2⟩. ⟨hal-04246681⟩

• Article dans une revue

Theory of phonons in three- and four-layer superlattices

A. Rodriguez, A. Noguera, T. Szwacka, J. Mendialdua, Leonard Dobrzynski

Physical Review B, 1989, 39 (17), pp.12568-12574. ⟨10.1103/PhysRevB.39.12568⟩. ⟨hal-04070519⟩

• Communication dans un congrès

Accurate two-dimensional process-device simulations for the analysis of punchthrough in walled emitter bipolar transistor

Emmanuel Dubois, B. Baccus, Dominique Collard

Proc. of NASECODE VI conference, Ed. J.J.H. Miller, Boole Press, Jun 1989, Dublin, Ireland. ⟨hal-04249158⟩

• Communication dans un congrès

IMPACT 1-2-3, an integrated 2D process/device simulator for MOS technology

Dominique Collard, Emmanuel Dubois, B. Baccus

Digest of the software forum: Software toold for process, device and circuit modeling, Ed. W. Crans, Boole Press, Jun 1989, Zurich, Switzerland. ⟨hal-04249154⟩

• Communication dans un congrès

Dynamic mesh refinement for multilayer process simulation

B. Baccus, Dominique Collard, Emmanuel Dubois

Digest of the software forum: Software toold for process, device and circuit modeling, Ed. W. Crans, Boole Press, Jun 1989, Zurich, Switzerland. ⟨hal-04249146⟩