Publications

• Article dans une revue

Noise and transit time in ungated FET structures

J. Mateos, T. Gonzalez, D. Pardo, P. Tadyszak, Francois Danneville, A. Cappy

IEEE Transactions on Electron Devices, 1997, 44 (12), pp.2128-2135. ⟨10.1109/16.644625⟩. ⟨hal-03612839⟩

• Communication dans un congrès

Edge-coupled InGaAs/InP phototransistors for microwave radio fibre links

J.-P. Vilcot, Vincent Magnin, J. van de Casteele, J. Harari, J.-P. Gouy, B. Bellini, D. Decoster

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, Nov 1997, London, United Kingdom. pp.163-168, ⟨10.1109/EDMO.1997.668592⟩. ⟨hal-04461601⟩

• Communication dans un congrès

Sol-gel synthesis of PZT thin films

S. Arscott

IEE Colloquium on Electro-Technical Ceramics - Processing, Properties and Applications, Nov 1997, London, United Kingdom. pp.5-5, ⟨10.1049/ic:19971051⟩. ⟨hal-02348151⟩

• Chapitre d'ouvrage

Theory of the radiative and non radiative processes in silicon nanocrystallites

Christophe Delerue, Guy Allan, Michel Lannoo

This chapter describes the theory of radiative and nonradiative processes in Silicon (Si) nanocrystallites. Near threshold optical transitions in an indirect bandgap material like silicon have very small oscillator strength preventing its use in optoelectronics. An interesting field of research is…

WILLARDSON R.K., WEBER E., LOCKWOOD D. Light emissions in silicon : from physics to devices, Academic Press, London, UK, pp.253, 1997, ⟨10.1016/S0080-8784(08)62505-3⟩. ⟨hal-00132030⟩

• Article dans une revue

Electronic surface states and miniband structure of superlattices with multiple layers per period

E. El Boudouti, B. Djafari-Rouhani, Abdellatif Akjouj, Leonard Dobrzynski, Róża Kucharczyk, M. Stęślicka

Physical Review B, 1997, 56 (15), pp.9603-9612. ⟨10.1103/PhysRevB.56.9603⟩. ⟨hal-04069657⟩

• Communication dans un congrès

Nanometer Scale Lithography of Silicon and Titanium using Scanning Probe Microscopy

Emmanuel Dubois, Paul-Aymeric Fontaine

27th European Solid-State Device Research Conference - ESSDERC, Sep 1997, Stuttgart, Germany. ⟨hal-04248550⟩

• Communication dans un congrès

Impact of non-equilibrium transport and series resistances in 0.1um bulk and SOI MOSFETs

Bricout Paul-Henri, Emmanuel Augendre, Emmanuel Dubois

27th European Solid-State Device Research Conference, Sep 1997, Stuttgart (Germany), Germany. ⟨hal-04248535⟩

• Proceedings/Recueil des communications

New III-V transducers for optical microwave and millimeter wave conversion

Didier Decoster, Jérôme Vandecasteele, Vincent Magnin, Jean-Philippe Gouy, Jean-Pierre Vilcot, Joseph Harari, Sophie Maricot

Fiber optic radio communications will require devices able to convert an optical carrier into a millimeter wave carrier. After a brief recall of possible systems to be used, showing that in most cases, the transducer must associate the following functions : high speed photodetection, millimeter…

Gallium Arsenide Applications Symposium GAAS 1997, 1997, ⟨10.6092/unibo%2Famsacta%2F1193⟩. ⟨hal-04446349⟩

• Article dans une revue

Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs

Alain Bravaix, Dominique Vuillaume

The hot carrier degradation of large-angle-tilt implanted drain (LATID) and standard LDD N-MOSFETs has been investigated thoroughly using the combination of I-V characterization, charge-pumping and profiling of the damaged region. Although the LATID structure exhibits a good current drivability and…

Solid-State Electronics, 1997, Solid-State Electronics, 41 (9), pp.1293-1301. ⟨10.1016/S0038-1101(97)00074-9⟩. ⟨hal-03023007⟩

• Article dans une revue

Acoustic band gaps in fibre composite materials of boron nitride structure

Jerome O. Vasseur, J Vasseur, Bahram Djafari-Rouhani, L. Dobrzynski, P Deymier

Journal of Physics: Condensed Matter, 1997, 9 (35), pp.7327-7341. ⟨10.1088/0953-8984/9/35/008⟩. ⟨hal-03301309⟩