Publications

• Article dans une revue

Transport Properties of Methyl-Terminated Germanane Microcrystallites

Davide Sciacca, Maxime Berthe, Bradley Ryan, Nemanja Peric, D. Deresmes, Louis Biadala, Christophe Boyaval, Ahmed Addad, Ophélie Lancry, Raghda Makarem, Sébastien Legendre, Didier Hocrelle, Matthew Panthani, Geoffroy Prévot, Emmanuel Lhuillier, Pascale Diener, B. Grandidier

Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and…

Nanomaterials, 2022, 12 (7), pp.1128. ⟨10.3390/nano12071128⟩. ⟨hal-03634314⟩

• Article dans une revue

How to tame a free non-laminar Savart sheet into individual jets?

Sofiene Oulded Taled Salah, Ghada Chouk, Alexis Duchesne, Nicolas de Cock, Khaoula Abrougui, Frédéric Lebeau, Stéphane Dorbolo

In this article, we study the division of a non-laminar Savart sheet into individual jets by mean of local disturbances. We paint a precise portrait of a free non-laminar Savart sheet formed by the vertical impact of a jet on a horizontal disk, its evolution in the air and its break up. We then…

International Journal of Multiphase Flow, 2022, 152, pp.104032. ⟨10.1016/j.ijmultiphaseflow.2022.104032⟩. ⟨hal-03667794v2⟩

• Article dans une revue

Non-Hermitian skin effect in a phononic beam based on piezoelectric feedback control

Yabin Jin, Wenxin Zhong, Runcheng Cai, Xiaoying Zhuang, Yan Pennec, Bahram Djafari-Rouhani

Non-Hermitian systems have gained a great deal of interest in various wave problems due their ability of exhibiting unprecedented phenomena such as invisibility, cloaking, enhanced sensing, or the skin effect. The latter manifests itself by the localization of all bulk modes in a specific frequency…

Applied Physics Letters, 2022, 121 (2), pp.022202. ⟨10.1063/5.0097530⟩. ⟨hal-03742127⟩

• Article dans une revue

Review on Unmanned Aerial Vehicle Assisted Sensor Node Localization in Wireless Networks: Soft Computing Approaches

Visalakshi Annepu, Deepika Rani Sona, Chinthaginjala Ravikumar, Kalapraveen Bagadi, Mohammad Alibakhshikenari, Ayman Althuwayb, Bader Alali, Bal Virdee, Giovanni Pau, Iyad Dayoub, Chan Hwang See, Francisco Falcone

Node positioning or localization is a critical requisite for numerous position-based applications of wireless sensor network (WSN). Localization using the unmanned aerial vehicle (UAV) is preferred over localization using fixed terrestrial anchor node (FTAN) because of low implementation complexity…

IEEE Access, 2022, 10, pp.132875-132894. ⟨10.1109/ACCESS.2022.3230661⟩. ⟨hal-03940270⟩

• Article dans une revue

Towards Outdoor Electromagnetic Field Exposure Mapping Generation Using Conditional GANs

Mohammed Mallik, Angesom Ataklity Tesfay, Benjamin Allaert, Rédha Kassi, Esteban Egea-Lopez, Jose-Maria Molina-Garcia-Pardo, Joe Wiart, Davy Gaillot, Laurent Clavier

With the ongoing fifth-generation cellular network (5G) deployment, electromagnetic field exposure has become a critical concern. However, measurements are scarce, and accurate electromagnetic field reconstruction in a geographic region remains challenging. This work proposes a conditional…

Sensors, 2022, 22 (24), pp.9643. ⟨10.3390/s22249643⟩. ⟨hal-03919067⟩

• Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than…

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩

• Article dans une revue

Monolayer molybdenum disulfide switches for 6G communication systems

Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande

Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to…

Nature Electronics, 2022, 5, pp.367-373. ⟨10.1038/s41928-022-00766-2⟩. ⟨hal-03689339⟩

• Article dans une revue

Unstationary dynamics of drops subjected to MHz-surface acoustic waves modulated at low frequency

Philippe Brunet, Michael Baudoin

In the present work, we investigate the unstationary dynamics of sessile droplets subjected to high-frequency surface acoustic waves modulated at a lower frequency close to the first inertio-capillary resonance mode of the drop. Under the action of both acoustic streaming and radiation pressure,…

Experiments in Fluids, 2022, 63 (1), pp.34. ⟨10.1007/s00348-021-03365-7⟩. ⟨hal-03596906⟩

• Article dans une revue

Topological cavities in phononic plates for robust energy harvesting

Zhihui Wen, Yabin Jin, Penglin Gao, Xiaoying Zhuang, Timon Rabczuk, Bahram Djafari-Rouhani

Mechanical Systems and Signal Processing, 2022, 162, pp.108047. ⟨10.1016/j.ymssp.2021.108047⟩. ⟨hal-03542927⟩

• Communication dans un congrès

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer…