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Article dans une revue

Monolayer molybdenum disulfide switches for 6G communication systems

Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande

Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to…

Nature Electronics, 2022, 5, pp.367-373. ⟨10.1038/s41928-022-00766-2⟩. ⟨hal-03689339⟩

Article dans une revue

Terphenylthiazole-based self-assembled monolayers on cobalt with high conductance photo-switching ratio for spintronics

Vladimir Prudkovskiy, Imane Arbouch, Anne Léaustic, Pei Yu, Colin van Dyck, David Guérin, Stéphane Lenfant, Talal Mallah, Jérôme Cornil, Dominique Vuillaume

Two new photo-switchable terphenylthiazole molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a larger conductance of the light-induced closed…

Nanoscale, 2022, 14, pp.5725 - 5742. ⟨10.1039/d2nr00591c⟩. ⟨hal-03625458⟩

Article dans une revue

CRC-Based Correction of Multiple Errors Using an Optimized Lookup Table

Vivien Boussard, Stephane Coulombe, François-Xavier Coudoux, Patrick Corlay

In this paper, we propose a new approach to perform multiple error correction in wireless communications over error-prone networks. It is based on the cyclic redundancy check syndrome, using an optimized lookup table that avoids performing arithmetic operations. This method is able to achieve the…

IEEE Access, 2022, 10, pp.23931-23947. ⟨10.1109/ACCESS.2022.3155457⟩. ⟨hal-03664661⟩

Article dans une revue

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major…

Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩. ⟨hal-03467546⟩

Article dans une revue

La photonique dans la métropole lilloise

Laurent Bigot, Guillaume Ducournau, A. Amo

Ces dernières années, la métropole lilloise s’est imposée comme un pôle de recherche académique incontournable dans le domaine de la photonique. C’est notamment le cas des travaux en optique fibrée, en optique non-linéaire, en topologie ou encore en photonique-Terahertz, qui ont une forte…

Photoniques, 2022, 114, pp.17-20. ⟨10.1051/photon/202211417⟩. ⟨hal-03706864⟩

Article dans une revue

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Caroline Maye, Sylvie Lepilliet, Etienne Okada, Marc Margalef-Rovira, Issa Alaji, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière

This article aims to discuss challenges and performances of a passive load-pull test bench dedicated to the G-band frequencies. The first task of this work is the development of the setup to perform high power generation, impedance generation, and high-power dynamic of measurement. The solution…

IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1), pp 444-452. ⟨10.1109/TMTT.2021.3111170⟩. ⟨hal-03507882⟩

Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than…

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩

Article dans une revue

Picosecond acoustics versus tape adhesion test: Confrontation on a series of similar samples with a variable adhesion

A. Vital-Juarez, L. Roffi, J.-M. Desmarres, Arnaud Devos

A large number of methods have been developed to characterize the adhesion of a thin film to a substrate. Among them, tape test is still one of the most popular methods. Acoustic waves and especially ultra-high frequency acoustic waves are also sensitive to adhesion defects as they affect the way…

Surface and Coatings Technology, 2022, 448, pp.128926. ⟨10.1016/j.surfcoat.2022.128926⟩. ⟨hal-03814601⟩

Article dans une revue

Embroidered Spoof Surface Plasmon Polariton Transmission Line for Wireless Body Sensor Network

Ali Ghaddar, Baptiste Garnier, François Rault, Eric Lheurette, Ludovic Burgnies

A wearable Spoof Surface Plasmon Polariton Transmission Line (SSPP TL) operating at 2.45 GHz designed for embroidery production and on-body communication is proposed. The SSPP TL supports both even and odd modes launched by near field coupling with a dipole antenna perpendicular and parallel to the…

IET Microwaves Antennas and Propagation, 2022, 16 (4), pp.187-193. ⟨10.1049/mia2.12224⟩. ⟨hal-03592149⟩

Article dans une revue

Modeling of access resistances and channel temperature estimation for GaN HEMT

Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury, Christophe Gaquière

Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access resistances and have verified their temperature dependency with the…

Journal of Thermal Analysis and Calorimetry, 2022, 147, pp.10991-10998. ⟨10.1007/s10973-022-11371-y⟩. ⟨hal-03670320⟩