Publications

• Article dans une revue

Strong and weak polarization-dependent interactions in connected and disconnected plasmonic nanostructures

Damien Eschimèse, François Vaurette, Céline Ha, Steve Arscott, Thierry Mélin, Gaëtan Lévêque

We explore numerically and experimentally the formation of hybridized modes between a bright mode displayed by a gold nanodisc and either dark or bright modes of a nanorod – both elements being either separated by a nanometer-size gap (disconnected system) or relied on a metal junction (connected…

Nanoscale Advances, 2022, 4, pp.1173-1181. ⟨10.1039/D1NA00620G⟩. ⟨hal-03561511⟩

• Article dans une revue

Stochastic Geometry-based Analysis of the Impact of Underlying Uncorrelated IoT Networks on LoRa Coverage

Romain Chevillon, Guillaume Andrieux, Laurent Clavier, Jean-François Diouris

IoT networks are more and more present nowadays. Some IoT protocols share the samebandwidth leading to interference on neighboring networks and decrease of overall coverage. To contributeto this problem, an analytical study of the coverage of a LoRa network with underlying uncoordinatedIoT networks…

IEEE Access, 2022, 10, pp.8790-8803. ⟨10.1109/ACCESS.2022.3141540⟩. ⟨hal-03520374⟩

• Article dans une revue

Unstationary dynamics of drops subjected to MHz-surface acoustic waves modulated at low frequency

Philippe Brunet, Michael Baudoin

In the present work, we investigate the unstationary dynamics of sessile droplets subjected to high-frequency surface acoustic waves modulated at a lower frequency close to the first inertio-capillary resonance mode of the drop. Under the action of both acoustic streaming and radiation pressure,…

Experiments in Fluids, 2022, 63 (1), pp.34. ⟨10.1007/s00348-021-03365-7⟩. ⟨hal-03596906⟩

• Article dans une revue

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major…

Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩. ⟨hal-03467546⟩

• Communication dans un congrès

Oscillations du ressaut hydraulique circulaire

Aurélien Goerlinger, Farzam Zoueshtiagh, Alexis Duchesne

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607819⟩

• Article dans une revue

CRC-Based Correction of Multiple Errors Using an Optimized Lookup Table

Vivien Boussard, Stephane Coulombe, François-Xavier Coudoux, Patrick Corlay

In this paper, we propose a new approach to perform multiple error correction in wireless communications over error-prone networks. It is based on the cyclic redundancy check syndrome, using an optimized lookup table that avoids performing arithmetic operations. This method is able to achieve the…

IEEE Access, 2022, 10, pp.23931-23947. ⟨10.1109/ACCESS.2022.3155457⟩. ⟨hal-03664661⟩

• Article dans une revue

Terphenylthiazole-based self-assembled monolayers on cobalt with high conductance photo-switching ratio for spintronics

Vladimir Prudkovskiy, Imane Arbouch, Anne Léaustic, Pei Yu, Colin van Dyck, David Guérin, Stéphane Lenfant, Talal Mallah, Jérôme Cornil, Dominique Vuillaume

Two new photo-switchable terphenylthiazole molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a larger conductance of the light-induced closed…

Nanoscale, 2022, 14, pp.5725 - 5742. ⟨10.1039/d2nr00591c⟩. ⟨hal-03625458⟩

• Article dans une revue

Monolayer molybdenum disulfide switches for 6G communication systems

Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande

Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to…

Nature Electronics, 2022, 5, pp.367-373. ⟨10.1038/s41928-022-00766-2⟩. ⟨hal-03689339⟩

• Article dans une revue

Picosecond acoustics versus tape adhesion test: Confrontation on a series of similar samples with a variable adhesion

A. Vital-Juarez, L. Roffi, J.-M. Desmarres, Arnaud Devos

A large number of methods have been developed to characterize the adhesion of a thin film to a substrate. Among them, tape test is still one of the most popular methods. Acoustic waves and especially ultra-high frequency acoustic waves are also sensitive to adhesion defects as they affect the way…

Surface and Coatings Technology, 2022, 448, pp.128926. ⟨10.1016/j.surfcoat.2022.128926⟩. ⟨hal-03814601⟩

• Communication dans un congrès

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer…