Publications

• Article dans une revue

Efficient detoxification of Cr(VI)-containing effluents by sequential adsorption and reduction using a novel cysteine-doped PANi@faujasite composite: Experimental study supported by advanced statistical physics prediction

Mohamed Laabd, Abdelaziz Imgharn, Abdelghani Hsini, Yassine Naciri, Mohamed Mobarak, Sabine Szunerits, Rabah Boukherroub, Abdallah Albourine

Nowadays, the global spreading of hazardous heavy metals becomes a top-priority environmental challenge, owing to its serious detrimental health outcomes. Herein, a novel cysteine-doped polyaniline@faujasite hybrid composite (Cys-PANi@FAU-50) was synthesized via a facile in-situ polymerization…

Journal of Hazardous Materials, 2022, 422, pp.126857. ⟨10.1016/j.jhazmat.2021.126857⟩. ⟨hal-03457788⟩

• Article dans une revue

Universality of the optical absorptance quantization in two-dimensional group-IV, III-V, II-VI and IV-VI semiconductors

Michel Lannoo, P Tim Prins, Zeger Hens, Daniel Vanmaekelbergh, Christophe Delerue

The optical absorptance of a single graphene layer over a wide range of wavelengths is known to be remarkably constant at the universal value πα where α is the fine structure constant. Using atomistic tight-binding calculations, we show that the absorptance spectra of nanometer-thin layers (quantum…

Physical Review B, 2022, 105, pp.035421. ⟨10.1103/PhysRevB.105.035421⟩. ⟨hal-03536349⟩

• Article dans une revue

Broadband super-resolution Terahertz Time domain spectroscopy applied to Gas analysis

Sophie Eliet, Arnaud Cuisset, Francis Hindle, Jean-Francois Lampin, Romain Peretti

Commercially available Terahertz (THz) Time domain spectroscopy (THz-TDS) apparatus are used in multiple application fields from material science to biology, and even in industry to measure the thickness of a paint layers. Its broad spectral coverage is of interest for air quality monitoring and…

IEEE Transactions on Terahertz Science and Technology, 2022, 12 (1), pp.75-80. ⟨10.1109/TTHZ.2021.3120029⟩. ⟨hal-03143451v3⟩

• Thèse

Thermal interface : High thermal conductivity phase change materials for thermal management in high power electronic devices, Interface Thermique : Matériaux à changement de phase à haute conductivité thermique pour le management thermique des composants électroniques de puissance

Romain Hubert

Phase Change Material (P C M) have been widely used for thermal energy storage due to their highlatent heat of fusion for thermal management applications. However, P C M suffer from their verylow thermal conductivity which limits heat spreading around the heat source. Without properthermal…, Les matériaux à changement de phase (P C M) sont largement utilisés du fait de leur forte chaleur latente de fusion pour des applications de management thermique. Malgré cela, les P C M pâtissent de leur faible conductivité thermique qui limite la propagation de la chaleur autour de la source.Sans…

Electronics. Centrale Lille Institut, 2022. English. ⟨NNT : 2022CLIL0001⟩. ⟨tel-04002579⟩

• Article dans une revue

A perspective on elastic metastructures for energy harvesting

Zhihui Wen, Wan Wang, Abdelkrim Khelif, Bahram Djafari-Rouhani, Yabin Jin

Rapid advances have been made in the properties of metastructures, including phononic crystals, metamaterials, and metasurfaces, with respect to their robustness, high power density, and broadband behavior. This presents unique advantages for energy harvesting devices to meet the demands for…

Applied Physics Letters, 2022, 120 (2), pp.020501. ⟨10.1063/5.0078740⟩. ⟨hal-03596148⟩

• Article dans une revue

Strong and weak polarization-dependent interactions in connected and disconnected plasmonic nanostructures

Damien Eschimèse, François Vaurette, Céline Ha, Steve Arscott, Thierry Mélin, Gaëtan Lévêque

We explore numerically and experimentally the formation of hybridized modes between a bright mode displayed by a gold nanodisc and either dark or bright modes of a nanorod – both elements being either separated by a nanometer-size gap (disconnected system) or relied on a metal junction (connected…

Nanoscale Advances, 2022, 4, pp.1173-1181. ⟨10.1039/D1NA00620G⟩. ⟨hal-03561511⟩

• Article dans une revue

Stochastic Geometry-based Analysis of the Impact of Underlying Uncorrelated IoT Networks on LoRa Coverage

Romain Chevillon, Guillaume Andrieux, Laurent Clavier, Jean-François Diouris

IoT networks are more and more present nowadays. Some IoT protocols share the samebandwidth leading to interference on neighboring networks and decrease of overall coverage. To contributeto this problem, an analytical study of the coverage of a LoRa network with underlying uncoordinatedIoT networks…

IEEE Access, 2022, 10, pp.8790-8803. ⟨10.1109/ACCESS.2022.3141540⟩. ⟨hal-03520374⟩

• Communication dans un congrès

Mise en œuvre de capteurs RF-MEMS acoustiques pour l’industrie 4.0

Yannick Dusch, Cécile Ghouila-Houri, Aurélien Mazzamurro, Ghizlane Boussatour, Hatem Dahmani, Olivier Bou Matar, Vincent Maurice, Philippe Pernod, Abdelkrim Talbi

Cette étude propose la conception complète d’un système de suivi à distance des sollicitations mécaniques dans les machines électriquesafin de répondre aux problématiques de l’industrie 4.0 et de la maintenance prédictive. Elle s’appuie sur la conception, la fabrication et la caractérisation de…

16emes journées pédagogiques du CNFM, JPCNFM’2021, CNFM, Dec 2021, Saint-Malo, France. 6 p., J3eA Hors-série 1 - Actes JPCNFM’2021, Volume 21 (2022), ⟨10.1051/j3ea/20221019⟩. ⟨hal-03464507⟩

• Communication dans un congrès

[Invited] Quand la chimie du solide rencontre la micro-électronique: les micro-batteries 3D

Pascal Roussel, Christophe Lethien

2ème journées recherche de l'Université de Lille, 2022, Villeneuve d’Ascq, France. ⟨hal-03718364⟩

• Article dans une revue

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, M Diallo, Vanessa Avramovic, Kamel Haddadi, X. Wallart, L. Desplanque

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and…

Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩. ⟨hal-03547003⟩