Publications

• Thèse

Contribution au développement d'une méthode à ondes acoustiques de surface hautes fréquences dédiée à la caractérisation ultrasonore des structures à couches minces et au silicium mésoporeux, Contribution to the development of a high frequency surface acoustic wave method dedicated to the ultrasonic characterization of thin film structures and mesoporous silicon

Tahar Kadi

Ce travail rentre dans le cadre de la caractérisation des couches minces, de revêtements et de surfaces fonctionnelles (épaisseur, constantes élastiques, porosité…). Parmi les méthodes de caractérisation potentielles, les méthodes ultrasonores employant des ondes de surface (SAW) sont…, This work is within the scope of characterization of thin layers, coatings and functional surfaces (thickness, elastic constants, porosity,…). Among the characterization methods, the ultrasonic methods using surface acoustic waves are particularly interesting. Indeed, the propagation of these waves…

Acoustique [physics.class-ph]. Université Polytechnique Hauts-de-France; Institut national des sciences appliquées Hauts-de-France, 2021. Français. ⟨NNT : 2021UPHF0023⟩. ⟨tel-03385665⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on AlN substrate for power electronics

Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power…

44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩

• Communication dans un congrès

Above 70% PAE in Q-band with AlN/GaN HEMTs structures

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

In this paper, we report on a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performances and robustness for the thinner barrier layer, which is attributed to the reduced mechanical strain into the heterostructure. The impact…

WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩

• Communication dans un congrès

Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Micka Bah, Damien Valente, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Jean-Claude de Jaeger, Eric Frayssinet, Remi Comyn, Thi Huong Ngo, Daniel Alquier, Yvon Cordier

This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using…

Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132. ⟨hal-03284079⟩

• Communication dans un congrès

GaN schottky diode on silicon substrate for high power THz multiplier

Giuseppe Di Gioia, M Samnouni, H Bouillaud, P Mondal, J Treuttel, Yvon Cordier, Malek Zegaoui, Guillaume Ducournau, Yannick Roelens, Mohammed Zaknoune

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated on silicon substrate and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power…

WOCSDICE 2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03384345⟩

• Communication dans un congrès

Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Quentin Fornasiero, N. Defrance, Marie Lesecq, Eric Frayssinet, Yvon Cordier, Florian Chevalier, Nadir Idir, Jean-Claude de Jaeger

The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in…

Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52. ⟨hal-03275589⟩

• Communication dans un congrès

Subthreshold neuromorphic devices for spiking neural networks applied to embedded A.I

Christophe Loyez, Kevin Carpentier, Ilias Sourikopoulos, Francois Danneville

Energy autonomy is one of the major challenges of embedded Artificial Intelligence. Among the candidate technologies likely to take up such a challenge, spiking neural networks are the most promising because of both their spatio-temporal and sparse representation of the information. In this context…

19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon, France. pp.1-4, ⟨10.1109/NEWCAS50681.2021.9462779⟩. ⟨hal-03325598⟩

• Communication dans un congrès

Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

B. Orfao, B.G. Vasallo, D. Moro-Melgar, Mohammed Zaknoune, Giuseppe Di Gioia, M. Samnouni, S. Perez, T. Gonzalez, J. Mateos

Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the…

2021 13th Spanish Conference on Electron Devices (CDE), Jun 2021, Sevilla, Spain. pp.94-97, ⟨10.1109/CDE52135.2021.9455727⟩. ⟨hal-04054156⟩

• Communication dans un congrès

H2S photoacoustic detection with an integrated THz gas sensor for food quality control

Elias Akiki, Marie-Hélène Mammez, Guillaume Ducournau, Marc Faucher, Benjamin Walter, Gaël Mouret, Jean-Francois Lampin, Mathias Vanwolleghem

THz photoacoustic (PA) detection of H2S gas concentrations on the order of 100 ppm using a Poly-Si membrane as a PA microphone is reported. This result is a first step towards the demonstration of a fully integrated THz PA gas sensor with an expected sensitivity of 10's of ppb.

Journées du GDR Nano TeraMIR, Jun 2021, Virtuel, France. ⟨hal-03621511⟩

• Communication dans un congrès

Vertical multilayer structures based on porous silicon layers for mid-infrared applications

Sofiane Meziani, Maxime Duris, Mohamed Guendouz, Nathalie Lorrain, Parastesh Pirasteh, Loïc Bodiou, Warda Raiah, Yannick Coffinier, V. Thomy, Joël Charrier

Journées du GDR Nano TeraMIR, Jun 2021, virtuel, France. ⟨hal-03621610⟩