Publications

Affichage de 3041 à 3050 sur 15761


  • Communication dans un congrès

Ex-situ sputtering growth and wet etching of lead-ree piezoelectric thin film dedicated for composite pMUT applications

Ahmad Hamieh, Freddy Ponchel, Denis Remiens

17th International Workshop on Piezoelectric Materials and Applications in Actuators, IWPMA 2020, Sep 2020, Honnover, Germany. ⟨hal-03582674⟩

  • Communication dans un congrès

[Invited] Challenges and prospects of 3D micro-supercapacitors for powering the internet of things

Christophe Lethien

15th International Ceramics Congress, CIMTEC 2020, Symposium CJ - Materials Demands Towards Next Generation Electrochemical Energy Storage Systems, Sep 2020, Montecatini Terme, Italy. ⟨hal-03547317⟩

  • Article dans une revue

Design and preparation of core-shell structured magnetic graphene oxide@MIL-101(Fe): Photocatalysis under shell to remove diazinon and atrazine pesticides

Hanieh Fakhri, Mahdi Farzadkia, Rabah Boukherroub, Varsha Srivastava, Mika Sillanpää

Solar Energy, 2020, 208, pp.990-1000. ⟨10.1016/j.solener.2020.08.050⟩. ⟨hal-03089831⟩

  • Article dans une revue

NiMnCr layered double hydroxide-carbon spheres modified Ni foam: An efficient positive electrode for hybrid supercapacitors

Min Li, Ahmed Addad, Mathias Dolci, Pascal Roussel, Mu. Naushad, Sabine Szunerits, Rabah Boukherroub

Chemical Engineering Journal, 2020, 396, pp.125370. ⟨10.1016/j.cej.2020.125370⟩. ⟨hal-03089832⟩

  • Communication dans un congrès

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Idriss Abid, Riad Kabouche, F Medjdoub, Sven Besendörfer, Elke Meissner, Joff Derluyn, Stefan Degroote, Marianne Germain, Hideto Miyake

Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work we present the fabrication and DC / high voltage characterizations of AlN/AlGaN…

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩

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