Publications

Affichage de 3271 à 3280 sur 16256


  • Communication dans un congrès

Laser-combined scanning tunneling microscopy on low-temperature grown GaAs

Yevheniia Chernukha, Maxime Berthe, Pascale Diener, B. Grandidier

Journées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France. ⟨hal-03606048⟩

  • Communication dans un congrès

Polydimethylsiloxane micro-channels application for the study of dynamic wetting of nano-etched silicon surfaces based on acoustic characterization method

Abbas Salhab, Julien Carlier, Pierre Campistron, M. Neyens, Malika Toubal, Bertrand Nongaillard, V. Thomy

Efficient cleaning of contaminations in the semiconductor industry is a determining factor in ensuring the good quality of the electronics products. We present here the dynamic wetting characterization of a fluid on top of Deep Trench Isolation (DTI) structures using ultra-high frequency acoustic…

15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021, Session 6 - Wet processing in narrow spaces and pattern collapse, Apr 2021, Virtual, Unknown Region. pp.143-149, ⟨10.4028/www.scientific.net/SSP.314.143⟩. ⟨hal-03362264⟩

  • Chapitre d'ouvrage

Chapter 6. Exploring and talking about music

Arthur Paté, Pascal Gaillard

Sensory Experiences - Exploring meaning and the senses, 24, John Benjamins Publishing Company, pp.213-247, 2021, Converging Evidence in Language and Communication Research, 9789027209801. ⟨10.1075/celcr.24.06pat⟩. ⟨hal-03619356⟩

  • Communication dans un congrès

[Invited workshop] Nanorobotic On-Wafer Probe Station Under Scanning Electron Microscope

Kamel Haddadi

15th European Microwave Week - Workshop Measurements at mmWave and Terahertz Frequencies of Three Measurement Quantities: S-Parameters, Power, and Complex Permittivity of Dielectric Materials, Jan 2021, Utrecht, Netherlands. ⟨hal-03582098⟩

  • Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, B. Grandidier, Pascale Diener, J. Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a…

Journées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France. ⟨hal-03606122⟩