International Conference on Advanced Materials, Microscopy and Energy (ICAMME), Apr 2019, Meknes, Morocco. ⟨10.1088/1757-899X/783/1/012023⟩. ⟨hal-03322800⟩

Article dans une revue

Reflections on the History of Science and the Modern University [Book Review]

Raffaele Pisano

Metascience, 2020, 29 (2), pp.245-247. ⟨10.1007/s11016-020-00516-0⟩. ⟨hal-04509253⟩

Communication dans un congrès

[Invited] Towards broadband THz spectroscopy and analysis of subwavelength size biological samples

Theo Hannotte, Louis Thomas, Melanie Lavancier, Sergey I. Mitryukovskiy, Jean-Francois Lampin, Romain Peretti

The Terahertz (THz) technology has now reached a level of maturation, which allows its uses beyond its core domains of application (telecom and imaging for security or healthcare). Vibrational spectroscopy in the THz range is employed in various fields and is specifically promising in (µ)biology.…

SPIE Photonics Europe, Conference 11348 - Nano- and Quantum Sciences: Terahertz Photonics, Apr 2020, Strasbourg (Online event), France. 1134803, 10 p., ⟨10.1117/12.2554518⟩. ⟨hal-02565888⟩

Pré-publication, Document de travail

Impulsive Multivariate Interference Models for IoT Networks

Ce Zheng, Malcolm Egan, Laurent Clavier, Gareth W. Peters, Jean-Marie Gorce

Device density in wireless internet of things (IoT) networks is now rapidly increasing and is expected to continue in the coming years. As a consequence, interference is a crucial limiting factor on network performance. This is true for all protocols operating on ISM bands (such as SigFox and LoRa…

2020. ⟨hal-02533821⟩

Article dans une revue

Highly efficient conversion of the nitroarenes to amines at the interface of a ternary hybrid containing silver nanoparticles doped reduced graphene oxide/ graphitic carbon nitride under visible light

Anurag Kumar, Bappi Paul, Rabah Boukherroub, Suman Jain

Journal of Hazardous Materials, 2020, 387, pp.121700. ⟨10.1016/j.jhazmat.2019.121700⟩. ⟨hal-03090040⟩

Article dans une revue

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, F Medjdoub

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without…

Physica Status Solidi A (applications and materials science), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩

Article dans une revue

Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances

Khaoula Ferchichi, Ramzi Bourguiga, Kamal Lmimouni, Sébastien Pecqueur

Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve record conductivity values of one of the most…

Synthetic Metals, 2020, 262, pp.116352. ⟨10.1016/j.synthmet.2020.116352⟩. ⟨hal-02509617⟩