Publications

Affichage de 3701 à 3710 sur 16175


  • Autre publication scientifique

Enjeux et perspectives pour la filière française de la fabrication électronique: une opportunité de renforcement de l'ensemble de la chaîne de valeur, table ronde 1

J.L. Estienne, T. Tingaud, Virginie Hoel, G. Rizzo

Conseil d'Orientation du GIP-CNFM 2020, Paris, France, 28 janvier, 2020. ⟨hal-03341259⟩

  • Communication dans un congrès

Temperature effects in the cohesion-decohesion process: applications to biophysics and material science

Stefano Giordano

GDRI GeoMech Workshop on : Deformation and cracking in granular and heterogeneous materials: multi scale experiment and modeling ”, Jan 2020, Lille, France. ⟨hal-02951126⟩

  • Communication dans un congrès

[Invited] Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles

Christophe Delerue, Nathali Alexandra Franchina Vergel, L. Christiaan Post, Athmane Tadjine, Yannick Lambert, Francois Vaurette, L. Desplanque, X. Wallart, Didier Stiévenard, M.P. Boneschanscher, J.L. Peters, Maryam Alimoradi Jazi, Thomas S Gardenier, Jette J van den Broeke, J.R. Moes, Ingmar Swart, Cristiane Morais Smith, B. Grandidier, Daniel Vanmaekelbergh

34èmes Journées Surfaces & Interfaces, JSI 2020, Jan 2020, Paris, France. ⟨hal-03317736⟩

  • Communication dans un congrès

[Invited] Newton Principia Geneva Edition ([1739-1742] 1822)–2022. A Research Editorial Project

Raffaele Pisano

Invited talks at The Scuola Superiore Normale di Udine, 20th January, Italy, Scuola Superiore Normale di Udine, University of Udine, Italy, Jan 2020, Udine, Italy. ⟨hal-04518345⟩

  • Article dans une revue

Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment

Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Gaudenzio Meneghesso, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, F Medjdoub

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon…

Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩

  • Article dans une revue

High performance of 3D silicon nanowires array@CrN for electrochemical capacitors

Abdelouadoud Guerra, Emile Haye, Amine Achour, Maxime Harnois, Toufik Hadjersi, Jean-Francois Colomer, Jean-Jacques Pireaux, Stéphane Lucas, Rabah Boukherroub

Silicon nanowire (SiNW) arrays were coated with chromium nitride (CrN) for use as supercapacitor electrodes. The CrN layer of different thicknesses was deposited onto SiNWs using bipolar magnetron sputtering method. The areal capacitance of the SiNWs-CrN, as measured in 0.5 M HSO electrolyte, was…

Nanotechnology, 2020, 31 (3), pp.035407. ⟨10.1088/1361-6528/ab4963⟩. ⟨hal-02367944⟩

  • Communication dans un congrès

[Invited] Exploiting the THz synchrotron radiation at its highest resolution and in a broadband fashion using heterodyne techniques

Marie-Aline Martin-Drumel, O. Pirali, S. Eliet, Z. Buchanan, J. Turut, P. Roy, Francis Hindle, Jean-Francois Lampin, Gaël Mouret

résumé

SOLEIL Users’ Meeting, Jan 2020, Gif sur Yvette, France. ⟨hal-04410769⟩