Publications

• Article dans une revue

Terahertz Frequency Comb High-Resolution Heterodyne Spectrometer

Francis Hindle, Alexandra Khabbaz, Anthony Roucou, Jean-Francois Lampin, Gaël Mouret

We demonstrate the advantages of THz frequency combs for high-resolution spectroscopy. This benefits from wide spectral coverage and the exact knowledge of the frequency position of each comb component. Heterodyne detection combined with a fast Fourier spectrometer enables rapid and simultaneous…

IEEE Transactions on Terahertz Science and Technology, 2025, 15 (4), ⟨10.1109/TTHZ.2025.3572249⟩. ⟨hal-04811272v2⟩

• Article dans une revue

Integrated proteomics and metabolomics to evaluate the combined effect of propyl gallate and fumonisin B1 on colon inflammation in vitro and in vivo

Xiangrong Chen, Chenxin Dongye, Yan Li, Yanfang Zhao, Rabah Boukherroub, Huijuan Li, Tianliang Li, Xiangfeng Chen

Ecotoxicology and Environmental Safety, 2025, 300, pp.118440. ⟨10.1016/j.ecoenv.2025.118440⟩. ⟨hal-05123223⟩

• Communication dans un congrès

AlGaN channel high electron mobility transistors on Si for power electronics

Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Julien Pernot, Maud Nemoz, Sebastian Tamariz, Stéphanie Rennesson, Fabrice Semond, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France. ⟨hal-05398228⟩

• Communication dans un congrès

Back Barrier Integration for > 4kV Blocking in GaN HEMTs on Sapphire without Field Plates

Adrien Bidaud, Lyes Ben-Hammou, Etienne Okada, Katir Ziouche, F Medjdoub

<div><p>This work presents a significant advancement in optimizing the trade-off between on-resistance and breakdown voltage in GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. By integrating an AlGaN back barrier and employing high carbon doping in the…

SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2025), Jul 2025, Toulouse, France. ⟨hal-05346045⟩

• Communication dans un congrès

On the Trustworthiness of Spiking Neural Networks and Neuromorphic Systems

Theofilos Spyrou, Haralampos-G Stratigopoulos, Ihsen Alouani, Said Hamdioui, Anteneh Gebregiorgis

<div><p>Neuromorphic computing offers a promising solution for realizing energy-efficient and compact Artificial Intelligence (AI) systems. Implemented with Spiking Neural Networks (SNNs), neuromorphic systems can benefit from SNN characteristics, such as event-driven computation, event…

2025 IEEE European Test Symposium (ETS), May 2025, Tallinn, Estonia. pp.1-10, ⟨10.1109/ETS63895.2025.11049613⟩. ⟨hal-05215055⟩

• Article dans une revue

Sputtered molybdenum nitride films for asymmetric micro-supercapacitors in aqueous electrolyte

Aiman Jrondi, Pardis Simon, Jérémie Chaillou, Lydia Karmazin, Antonella Iadecola, Isabelle Roch-Jeune, Herve Vezin, Wan-Yu Tsai, Pascal Roussel, Christophe Lethien

Here we investigated the electrochemical performance of molybdenum nitride films as an efficient electrode for asymmetric micro-supercapacitors. Molybdenum nitride films were successfully deposited and optimized by reactive magnetron sputtering. On the one hand, the tuning of several deposition…

Energy Storage Materials, 2025, 80, pp.104399. ⟨10.1016/j.ensm.2025.104399⟩. ⟨hal-05158241⟩

• Communication dans un congrès

Implementation of a back barrier to boost the blocking voltage of GaN HEMT on sapphire

Adrien Bidaud, Lyes Ben-Hammou, Etienne Okada, Katir Ziouche, F Medjdoub

This work presents a significant advancement in optimizing the trade-off between on-resistance and breakdown voltage in GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. By integrating an AlGaN back barrier and employing high carbon doping in the buffer layer, we achieve…

6ème Symposium de Génie Électrique (SGE 2025), Jul 2025, Toulouse, France. ⟨hal-05506483⟩

• Communication dans un congrès

Unusual optoelectronic and topological properties of HgTe QDs

Antoine Hage, Christophe Delerue

Summer School on Nanocharacterization, Maxime Berthe; Kamel Haddadi, Jul 2025, Villeneuve d'Ascq, France. ⟨hal-05171445⟩

• Communication dans un congrès

Status and progress of GaN-based millimeter-wave transistors and vertical GaN-on-silicon devices at IEMN

F Medjdoub

Recent advancements in GaN-based millimeter-wave transistors and vertical GaN-on-silicon devices are driving the evolution of next-generation RF and power electronic technologies. At the forefront of this progress is the strategic use of epilayer engineering in aggressively scaled GaN HEMTs, which…

12th International Conference on Applied Materials for advanced Technology (ICMAT), Jun 2025, Singapour, Singapore. ⟨hal-05344599⟩

• Communication dans un congrès

Lagrangian's Mechanism in Maxwell's Electro-Magnetism (1865-1873) In: Commission History of Science Symposium

Raffaele Pisano

27th Congress of French Physical Society, Jun 2025, University of Technology, Troyes, France. ⟨hal-05071779⟩