Publications

• Communication dans un congrès

Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

Javier Mateos, Tomas Gonzalez, Ignacio Iniguez-De-La-Torre, Sergio Garcia, Susana Perez, Christophe Gaquière, Guillaume Ducournau, Marie Lesecq, K Radhakrishnan, Dharmarasu Nethaji, Manvi Agrawal

With the aim of producing free-running Gunn oscillations in GaN devices, we propose the use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an AlGaN/GaN heterojunction. To this…

2019 IEEE Asia-Pacific Microwave Conference (APMC), Dec 2019, Singapore, Singapore. pp.971-973, ⟨10.1109/APMC46564.2019.9038486⟩. ⟨hal-04038765⟩

• Thèse

Etude et optimisation d’un système de vidéotransmission conjoint Source-Canal basé « SoftCast », Study and optimization of a Joint Source-Channel video-transmission system based on “SoftCast”

Anthony Trioux

Des nouveaux schémas de Codage Vidéo Linéaire (CVL) ont démontré ces dernières années un potentiel élevé pour la diffusion de contenus vidéo sur des canaux de transmission sans-fil sévères. SoftCast représente le pionnier des schémas CVL. Différent des standards de transmission vidéo actuels et…, Linear video coding (LVC) schemes have recently demonstrated a high potential for delivering video content over challenging wireless channels. SoftCast represents the pioneer of the LVC schemes. Different from current video transmission standards and particularly useful in broadcast situation,…

Traitement du signal et de l'image [eess.SP]. Université Polytechnique Hauts-de-France, 2019. Français. ⟨NNT : 2019UPHF0018⟩. ⟨tel-02483990⟩

• Communication dans un congrès

Characterization of electromechanically induced absorption and transparency in microwave optomechanical device

Sumit Kumar, Dylan Cattiaux, Andrew Fefferman, Eddy Collin, Xin Zhou

Microwave optomechanical circuitry is attractive for both fundamental research and quantum engineering as it gives microwave photons an ability to interact with mechanical phonons through radiation pressure [1]. In this scheme, a mechanical oscillator, a weak nonlinear component, also allows…

International Conference on Quantum Metrology and Sensing, Dec 2019, Paris, France. ⟨hal-02424742⟩

• Article dans une revue

A new spectral index for the extraction of built-up land features from Landsat 8 satellite imagery

Rafik Bouhennache, Toufik Bouden, Abdelmalik Taleb-Ahmed, Abbas Cheddad

Extracting built-up areas from remote sensing data like Landsat 8 satellite is a challenge. We have investigated it by proposing a new index referred as built-up land features extraction index (BLFEI). The BLFEI index takes advantage of its simplicity and good separability between the four major…

Geocarto International, 2019, 34 (14), pp.1531-1551. ⟨10.1080/10106049.2018.1497094⟩. ⟨hal-03133294⟩

• Thèse

Développement d'un microsystème étirable pour l'étude de l'activité électrique de cellules neuronales sous contrainte mécanique, Development of a stretchable microsystem for the study of electronic activity of neuronal cells under mechanical strain

Tiffany Baëtens

Alors que 50 million de personnes souffrent de traumatismes crâniens chaque année dans le monde entier, le choc (stress mécanique externe), engendré à cette occasion sur le réseau neuronal, peut amener à l’apparition de lésions cérébrales traumatiques. A moyen et long termes, ce processus peut…, 50 million people suffer from head trauma each year worldwide. The shock (external mechanical stress) acting on neural networks insided the brain can lead to the appearance of traumatic brain injuries (TBI). In the short term and long term, this process can lead to neuroinflammation and the…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI100⟩. ⟨tel-03196730⟩

• Pré-publication, Document de travail

Single-electron tunneling PbS/InP neuromorphic computing building blocks

P F Jarschel, J H Kim, Louis Biadala, Maxime Berthe, Yannick Lambert, R M Osgood, G. Patriarche, B. Grandidier, Jimmy Xu

We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear…

2019. ⟨hal-02394922⟩

• Poster de conférence

Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations

Leonardo Kopprio, Sylvain Le Gall, Christophe Longeaud, Ngoc Kim Thanh Bui, Boubakeur Ayachi, Jean-Pierre Vilcot, Agathe Virfeu, Jean-François Pierson

JNPV 2019, Dec 2019, Dourdan, France. ⟨hal-02419004⟩

• Communication dans un congrès

[BEST PAPER AWARD] Fall Detection of a Person in a Reverberant Environment using Bistatic Radar

M. Yusuf, B. De Beelde, E. Tanghe, Pierre Laly, D.P. Gaillot, M. Lienard, E. De Poorter, L. Martens, W. Joseph

• Article dans une revue

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs 1– x Sb x Shell on InAs Nanowires

M. Schnedler, T. Xu, Isabelle Lefebvre, J.-P. Nys, S R Plissard, Maxime Berthe, H. Eisele, R. E Dunin-Borkowski, Ph. Ebert, B. Grandidier

A chemical short range order is found in single monolayer InAs 1-x Sb x shells, which inherit a wurtzite structure from the underlying InAs nanowire, instead of crystallizing in the energetically preferred zincblende structure. The chemical order is characterized by an anti-correlation ordering…

Nano Letters, 2019, 19 (12), pp.8801-8805. ⟨10.1021/acs.nanolett.9b03584⟩. ⟨hal-03036942⟩

• Article dans une revue

2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Mohamed-Reda Irekti, Marie Lesecq, N. Defrance, Etienne Okada, Eric Frayssinet, Yvon Cordier, Jean-Guy Tartarin, Jean-Claude de Jaeger

In this letter, a record performance at 40 GHz obtained on AlGaN/GaN high electron mobility transistor (HEMT) grown on Hydride Vapor Phase Epitaxy (HVPE) Free-Standing GaN substrate is reported. An output power density of 2 W.mm-1 associated with 20.5 % power added efficiency and a linear power…

Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩. ⟨hal-02929065⟩