Publications

Affichage de 3991 à 4000 sur 15761


  • Article dans une revue

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, Joff Derluyn, Stefan Degroote, Marianne Germain, Filip Gucmann, Callum Middleton, James W Pomeroy, Martin Kuball

In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance…

International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩

  • Autre publication scientifique

Focus filière électronique

Virginie Hoel

Rendez-vous « Conseillez l’industrie ! » 2019, Paris, France, 22 mars, 2019. ⟨hal-03341281⟩

  • Article dans une revue

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Mohammad A. Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière

Microelectronic Engineering, 2019, 209, pp.53-59. ⟨10.1016/j.mee.2019.03.011⟩. ⟨hal-03143596⟩

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