Publications

• Article dans une revue

Low‐loss broadband (DC to 220 GHz) S‐CPW to S‐CPS transition for S‐CPS coplanar probing

Abdelhalim Saadi, Marc Margalef-Rovira, L. Vincent, Sylvie Lepilliet, Christophe Gaquière, Philippe Ferrari

The practical issue of probing coplanar stripline (CPS) structures is addressed in this Letter. A compact slow-wave coplanar waveguide (S-CPW) to slow-wave CPS (S-CPS) transition was designed and fabricated in a 55 nm BiCMOS process of STMicroelectronics. The signal strips of the slow-wave CPW and…

Electronics Letters, 2019, 55 (21), pp.1137-1139. ⟨10.1049/el.2019.2377⟩. ⟨hal-03133346⟩

• Article dans une revue

Investigation of cross-coupling in piezoelectric transducer arrays and correction

Abdelmajid Bybi, Sébastien Grondel, Ahmed Mzerd, Christian Granger, Mohammed Garoum, Jamal Assaad

Cross-coupling in piezoelectric transducer arrays is an undesirable phenomenon which decreases the performance of these devices. Indeed, when one element of a transducer is driven, it generates parasitic displacement fields at the radiating surfaces of the neighboring elements, which changes the…

International Journal of Engineering and Technology Innovation, 2019, 9 (4), pp.287-301. ⟨hal-03148965⟩

• Communication dans un congrès

Performance Evaluation of Multi-Carrier Modulation Techniques in High Speed Railway Environment with Impulsive Noise

Michel Saideh, Yamen Alsaba, Iyad Dayoub, Marion Berbineau

Multi-Carrier Modulation (MCM) techniques are considered as one of the main building blocks for future railway communication systems. This is due to their ability to handle spectrum scarcity and asynchronous communications dilemmas. In this paper, we evaluate the performance of different…

IEEE 2nd 5G World Forum, IEEE 5GWF 2019, Sep 2019, Dresden, Germany. pp.243-248, ⟨10.1109/5GWF.2019.8911645⟩. ⟨hal-03382891⟩

• Communication dans un congrès

Gigahertz frequency graphene transistor, high yield process and good stability under strain

Wei Wei, S. Mhedhbi, S. Salk, T. Levert, O. Txoperena, Emiliano Pallecchi, H. Happy

We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width (12µm,24µm and 50µm) are successfully fabricated on Kapton substrate. The…

14th European Microwave Integrated Circuits Conference, EuMIC 2019, Sep 2019, Paris, France. pp.208-211, ⟨10.23919/EuMIC.2019.8909548⟩. ⟨hal-03259628⟩

• Thèse

Massive MIMO channel characterization and propagation-based antenna selection strategies : application to 5G and industry 4.0, Caractérisation des canaux massive MIMO et stratégies de sélection d'antenne : application pour la 5G et l'industrie 4.0

Frédéric Challita

Continuous efforts have been made to boost wireless systems performance, however, current wireless networks are not yet able to fulfill the many gaps from 4G and requirements for 5G. Thus, significant technological breakthroughs are still required to strengthen wireless networks. For instance, in…, Dans le domaine des télécommunications sans fil, les domaines applicatifs sont de plus en plus larges, s’étendant par exemple du grand public, à la voiture connectée, à l’internet des objets (IoT Internet of Things) et à l’industrie 4.0. Dans ce dernier cas, l’objectif est d’aboutir à une…

Micro and nanotechnologies/Microelectronics. Université de Lille, 2019. English. ⟨NNT : 2019LILUI043⟩. ⟨tel-03624170v2⟩

• Thèse

Communications sans fil aux fréquences terahertz : applications à la vidéo haute définition temps réel, Wireless communications at terahertz frequencies : application for the high-definition television in real time

Sara Bretin

Les communications aux fréquences terahertz sont étudiées dans un contexte de transmissions en espace libre. L’objectif de la thèse est de proposer une étude comparative de différentes topologies d’électrodes supérieures appliquées aux photodiodes UTC ainsi qu’un module d’intégration de ces…, The terahertz frequency communications are studied in a context of free space transmissions. The objective of this thesis is to propose a comparative study of different topologies of top electrode applied to UTC photodiode and a module for packaging this type of components. Those components permit…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI065⟩. ⟨tel-03611228⟩

• Communication dans un congrès

Nanothermometry by Means of Scanning Thermal Microscopy: Investigation of Electro-thermal Devices with Embedded Metallic Lines

G. Hamaoui, A. Pic, W. Zhao, A. Alkurdi, J. Yin, S. Gallois-Garreignot, M. Bugnet, J.F. Robillard, Séverine Gomès, Pierre-Olivier Chapuis

THERMINIC 26 (Thermal Investigation of ICs and Systems), Sep 2019, Lecco, Italy. ⟨hal-02379735⟩

• Article dans une revue

NanoSIMS imaging of D/H ratios on FIB sections

Dan Lévy, Jérôme Aléon, Alice Aléon-Toppani, David Troadec, Rémi Duhamel, Adriana Gonzalez-Cano, Hélène Bureau, Hicham Khodja

The D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam (FIB) sections is developed in order to combine isotopic imaging by Nanoscale Secondary Ion Mass Spectrometry (NanoSIMS) of micrometer-sized grains with other nanoscale imaging techniques, such as Transmission Electron…

Analytical Chemistry, 2019, 91, pp.13763-13771. ⟨10.1021/acs.analchem.9b03134⟩. ⟨cea-02300872⟩

• Communication dans un congrès

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, Riad Kabouche, Malek Zegaoui, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

We report on linearity and robustness of AlN/GaN HEMTs with ultra-thin 4nm AlN barrier for millimeter wave range applications. Static and dynamic I-V characteristics feature high peak transconductance (gmpeak) of 385 mS/mm, and the transconductance exhibits small changes with gate bias. Semi on-…

30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩

• Communication dans un congrès

Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its…

30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩