Publications

• ART

3D Patterning of Si by Contact Etching With Nanoporous Metals

Stéphane Bastide, Encarnacion Torralba, Mathieu Halbwax, Sylvain Le Gall, Elias Mpogui, Christine Cachet-Vivier, Vincent Magnin, Joseph Harari, Dmitri Yarekha, Jean-Pierre Vilcot

Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring…

Frontiers in Chemistry, 2019, 7, pp.256. ⟨10.3389/fchem.2019.00256⟩. ⟨hal-02409484⟩

• ART

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• ART

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

H. Li, C.T.K. Lew, B.C. Johnson, J.C. Mccallum, S. Arscott, A.C.H. Rowe

A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum…

Physical Review Applied, 2019, 11 (4), pp.044010. ⟨10.1103/PhysRevApplied.11.044010⟩. ⟨hal-02345325⟩

• COMM

Robust and Simple Log-Likelihood Approximation for Receiver Design

Yasser Mestrah, Anne Savard, Alban Goupil, Guillaume Gelle, Laurent Clavier

Wireless Communications and Networking Conference (WCNC), 2019, Marrakesh, Morocco. pp.1-6, ⟨10.1109/WCNC.2019.8886114⟩. ⟨hal-02503135⟩

• ART

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, Johanna Rosen, Olof Kordina, Lars Hultman

ABSTRACT Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN…

Applied Physics Letters, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩

• ART

Biomimetic surface modifications of stainless steel targeting dairy fouling mitigation and bacterial adhesion

Sawsen Zouaghi, Séverine Bellayer, V. Thomy, Thomas Dargent, Yannick Coffinier, Christophe André, Guillaume Delaplace, Maude Jimenez

Food and Bioproducts Processing, 2019, 113, pp.32-38. ⟨10.1016/j.fbp.2018.10.012⟩. ⟨hal-02322038⟩

• ART

An autonomous low-power management system for energy harvesting from a miniaturized spherical piezoelectric transducer

Daher Diab, Fabrice Lefebvre, Georges Nassar, Nikolay Smagin, Samih Isber, Fawaz El Omar, Adnan Naja

A new spherical vibrational energy harvesting device with an additional low power management circuit for optimizing the power transfer from the mechanical vibrations to a storage capacitor is presented. The device is devoted to underwater wireless sensor network applications due to its broadband…

Review of Scientific Instruments, 2019, 90 (7), pp.075004. ⟨10.1063/1.5084267⟩. ⟨hal-03139114⟩

• ART

On evaporation via an inclined rotating circular lift-off shadow or stencil mask

S. Arscott

A mathematical model is developed to calculate the topography of a mesa obtained by evaporation of matter via inclined rotating lift-off shadow masking. Two types of masking are considered: a circular mask and a cylindrical mask-the latter involves sidewall deposition. The model is able to predict…

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2019, 37 (1), pp.011602. ⟨10.1116/1.5057404⟩. ⟨hal-02345344⟩

• ART

Design and Implementation of Ternary Logic Integrated Circuits by Using Novel Two-Dimensional Materials

Mingqiang Huang, Xingli Wang, Guangchao Zhao, Philippe Coquet, Bengkang Tay

With the approaching end of Moore’s Law (that the number of transistors in a dense integrated circuit doubles every two years), the logic data density in modern binary digital integrated circuits can hardly be further improved due to the physical limitation. In this aspect, ternary logic (0, 1, 2)…

Applied Sciences, 2019, 9 (20), pp.4212. ⟨10.3390/app9204212⟩. ⟨hal-03091459⟩

• ART

Thermodynamic foundations of physical chemistry: reversible processes and thermal equilibrium into the history

Raffaele Pisano, Abdelkader Anakkar, Emilio Marco Pellegrino, Maxime Nagels

Foundations of Chemistry, 2019, 21 (3), pp.297-323. ⟨10.1007/s10698-018-09324-1⟩. ⟨hal-04507524⟩