Publications

Affichage de 5291 à 5300 sur 16261


  • Article dans une revue

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Christophe Morelle, Didier Theron, Joff Derluyn, Stefan Degroote, Marianne Germain, Victor Zhang, Lionel Buchaillot, Bertrand Grimbert, Pascal Tilmant, Francois Vaurette, Isabelle Roch-Jeune, Virginie Brandli, Vanessa Avramovic, Etienne Okada, Marc Faucher

Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In clamped-clamped beams, it is well known that tensile stress can be used to increase the resonant frequency. Here…

Microsystem Technologies, 2018, 24 (1), pp.371-377. ⟨10.1007/s00542-017-3293-0⟩. ⟨hal-03183510⟩

  • Communication dans un congrès

A dual-bandwearable exposure meter for personal RF exposure assessment in indoor environments: on-body calibration in a reverberation chamber

Reza Aminzadeh, Arno Thielens, Davy Gaillot, M. Lienard, Sam Agneessens, Patrick van Torre, Matthias van den Bossche, Hendrik Rogier, Martin Roosli, Luc Martens, Wout Joseph

For the first time, a dual band wearable personal distributed exposure meter (DPDE) is designed. The DPDE is calibrated on-body in a reverberation chamber. The meter consists of four nodes including textile antennas operating at 2443 MHz (WiFi 2 GHz) and 2595 MHz (LTE 2600 MHz). The location of the…

2nd URSI Atlantic Radio Science Conference, AT-RASC 2018, May 2018, Gran Canaria, Spain. paper K02-05, 586-589, ⟨10.23919/URSI-AT-RASC.2018.8471583⟩. ⟨hal-03346242⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 7/3]

Raffaele Pisano

2018. ⟨hal-04511006⟩

  • Article dans une revue

Dynamics of the stress-mediated magnetoelectric memory cell N×(TbCo2/FeCo)/PMN-PT

Vladimir Preobrazhensky, Alexey Klimov, Nicolas Tiercelin, Yannick Dusch, Stefano Giordano, Anton Churbanov, Theo Mathurin, Philippe Pernod, Alexander Sigov

Stress-mediated magnetoelectric heterostructures represent a very promising approach for the realization of ultra-low energy Random Access Memories. The magnetoelectric writing of information has been extensively studied in the past, but it was demonstrated only recently that the magnetoelectric…

Journal of Magnetism and Magnetic Materials, 2018, 459, pp.66-70. ⟨10.1016/j.jmmm.2017.12.028⟩. ⟨hal-02318299⟩