Publications

• Article dans une revue

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping

L. Desplanque, Christophe Coinon, David Troadec, Pierre Ruterana, Gilles J Patriarche, Leo Bonato, Dieter Bimberg, Xavier Wallart

Nanotechnology, 2017, 28 (22), pp.225601. ⟨10.1088/1361-6528/aa6f41⟩. ⟨hal-02340903⟩

• Communication dans un congrès

A Nanostructured DWNT-based Surface Acoustic Wave Sensor for VOCs Detection

Hamida Hallil, Qing Zhang, Emmanuel Flahaut, Philippe Coquet, Jean-Luc Lachaud, Dominique Rebière, Corinne Dejous

24th International Symposium on Metastable, Amorphous and Nanostructured Materials (ISMANAM), Jun 2017, San Sebastian, Spain. ⟨hal-01719071⟩

• Article dans une revue

Robustness of states at the interface between topological insulators of opposite spin Chern number

Athmane Tadjine, Christophe Delerue

EPL - Europhysics Letters, 2017, 118 (6), pp.67003. ⟨10.1209/0295-5075/118/67003⟩. ⟨hal-02906810⟩

• Communication dans un congrès

Evaluation Non Destructive des enceintes de confinement de centrales nucléaires

Vincent Garnier, Jérôme Verdier, Zoubir Medhi Sbartaï, Jean François Chaix, Odile Abraham, Cedric Payan, Éric Larose, Bogdan Piwakowski, Jean-Marie Henault, Hamid Hafid

Les journées Cofrend 2017, Jun 2017, Strasbourg, France. ⟨hal-03576476⟩

• Article dans une revue

Performance Evaluation of High Data Rate M-OAM UWB Physical Layer for Intelligent Transportation Systems

Raja Elassali, Khadija Hamidoun, Yassin El Hillali, Atika Rivenq, Fouzia Elbahhar, Khalid El Baamrani, Lamyae Maatougui

In this paper, a high data rate modulation scheme for impulse radio ultra-wideband (IR-UWB) communication system using orthogonal waveforms is presented. The proposed M-state Orthogonal Amplitude Modulation (M-OAM) is evaluated under additive White Gaussian noise and indoor multipath channels IEEE.…

Wireless Personal Communications, 2017, 94 (4), pp.3265-3283. ⟨10.1007/s11277-016-3776-9⟩. ⟨hal-01402436⟩

• Article dans une revue

AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process

Ahmed Chakroun, Abdelatif Jaouad, Ali Soltani, Osvaldo Arenas, Vincent Aimez, Richard A Arès, Hassan Maher

IEEE Electron Device Letters, 2017, 38 (6), pp.779 - 782. ⟨10.1109/LED.2017.2696946⟩. ⟨hal-01914381⟩

• Article dans une revue

N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate

B. Hafsi, A. Boubaker, David Guérin, Stéphane Lenfant, A. Kalboussi, K. Lmimouni

Organic Electronics, 2017, 45, pp.81-88. ⟨10.1016/j.orgel.2017.02.035⟩. ⟨hal-04422357⟩

• Communication dans un congrès

Further insight in sputtered LiMn1.5Ni0.504 thin film for solid state Li-ion microbattery

Maxime Hallot, Pascal Roussel, Thierry Brousse, Christophe Lethien

8th Lithium Battery Discussions (LiBd8), Jun 2017, Arcachon, France. ⟨hal-02330598⟩

• Article dans une revue

Stochastic model for action potential simulation including ion shot noise

Beatriz G. Vasallo, Fabio Galan-Prado, Javier Mateos, Tomas Gonzalez, Sara Hedayat, Virginie Hoel, A. Cappy

Development of bioinspired devices for energy-efficient computing requires numerical models that can reproduce the global electrical behavior of neurons. We present herein a stochastic model based on the Monte Carlo technique that can reproduce the steady state and the action potential in neurons…

Journal of Computational Electronics, 2017, 16 (2), pp.419-430. ⟨10.1007/s10825-017-0967-x⟩. ⟨hal-03270094⟩

• Article dans une revue

Shallow Heavily Doped n\mathplus\mathplus Germanium by Organo-Antimony Monolayer Doping

Thibault Alphazan, Adrian Díaz Álvarez, François Martin, Helen Grampeix, Virginie Enyedi, Eugénie Martinez, Névine Rochat, Marc Veillerot, Marc Dewitte, Jean-Philippe Nys, Maxime Berthe, Didier Stiévenard, Chloé Thieuleux, B. Grandidier

Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the…

ACS Applied Materials & Interfaces, 2017, 9 (23), pp.20179--20187. ⟨10.1021/acsami.7b02645⟩. ⟨hal-01872861⟩