Publications

• Article dans une revue

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Susana Pérez, Philippe Altuntas, Virginie Hoel, Stephanie Rennesson, Yvon Cordier, Tomás González, Javier Mateos, Ignacio Íñiguez-De-La-Torre

The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the microwave range, both in the transconductance and…

Semiconductor Science and Technology, 2017, 32 (3), 035011, 8 p. ⟨10.1088/1361-6641/aa5473⟩. ⟨hal-03270095⟩

• Communication dans un congrès

Design of low noise and low power photo-receptor for CMOS vision sensor

Jamel Nebhen, Julien Dubois, Nicolas Brochard, Dominique Ginhac

2016 IEEE International Conference on Electronics, Circuits, & Systems (ICECS), IEEE, Dec 2016, Monte-Carlo, Monaco. ⟨hal-01857549⟩

• Article dans une revue

Light-controlled flows in active fluids

Julien Dervaux, Marina Capellazzi Resta, Philippe Brunet

Many photosynthetic microorganisms are able to detect light and move toward optimal intensities. This ability, known as phototaxis, plays a major role in ecology by affecting natural phytoplankton mass transfers and has important applications in bioreactor and artificial microswimmers technologies…

Nature Physics, 2017, 13 (3), pp.306-312. ⟨10.1038/nphys3926⟩. ⟨hal-02326433⟩

• Article dans une revue

Effect of etching time on morphological, optical and structural properties of silicon nanowire arrays etched on multi-crystalline silicon wafer

Abderrahmane Hamdi, Chohdi Amri, Rachid Ouertani, Hatem Ezzaouia

Journal of Materials Science: Materials in Electronics, 2017, 28 (6), pp.4807-4813. ⟨10.1007/s10854-016-6126-5⟩. ⟨hal-03837470⟩

• Article dans une revue

Fourier-like conduction and finite one-dimensional thermal conductivity in long silicon nanowires by approach-to-equilibrium molecular dynamics

Hayat Zaoui, Pier Luca Palla, Fabrizio Cleri, Évelyne Martin

Physical Review B, 2017, 95 (10), 104309, 7 p. ⟨10.1103/PhysRevB.95.104309⟩. ⟨hal-03407494⟩

• Communication dans un congrès

Lectio Magistralis. The Breaking of a Paradigm: from Mechanics to Thermodynamics

Raffaele Pisano

Science & Engineering, ISEPP Institute, Portland State University, March 2nd, U.S.A., Institute of Science, Engineering and Public Policy Program, Portland State University, Portland, U.S.A., Feb 2017, Portland (OR-USA), United States. ⟨hal-04518391⟩

• Article dans une revue

Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density

Fabian Cadiz, David Lagarde, Pierre Renucci, D. Paget, Thierry Amand, Hélène Carrère, H. Rowe, S. Arscott

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 × 1017 cm−3 using time-resolved photoluminescence spectroscopy at 15 K. At low photocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to…

Applied Physics Letters, 2017, 110 (8), pp.082101. ⟨10.1063/1.4977003⟩. ⟨hal-02053976⟩

• Article dans une revue

Scleral lenses for severe chronic GvHD-related keratoconjunctivitis sicca: a retrospective study by the SFGM-TC

M Magro, J Gauthier, R Richet, R. Robin, N. Nguyen, S. Suarez, J-H Dalle, T Fagot, A. Huynh, Marie-Thérèse Rubio, R Oumadely, S Vigouroux, N. Milpied, A Delcampe, I. Yakoub-Agha

Bone Marrow Transplantation, 2017, 52 (6), pp.878 - 882. ⟨10.1038/bmt.2017.9⟩. ⟨hal-01777907⟩

• Article dans une revue

A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

A. Boubaker, B. Hafsi, K. Lmimouni, A. Kalboussi

Pentacene and PolyeraTM N2200 based-organic field effect transistors (OFETs), have been fabricated and simulated in a bottom-gate/back contacts configuration. The simulations were processed with the help of 2D drift-diffusion model. Comparison and analysis of the electrical characteristics of both…

Journal of Materials Science: Materials in Electronics, 2017, 28 (11), pp.7834-7843. ⟨10.1007/s10854-017-6480-y⟩. ⟨hal-04422389⟩

• Article dans une revue

Introduction. 1564-2014. Homage to Galileo Galilei

Raffaele Pisano, Paolo Bussotti

Philosophia Scientiae, 2017, 21-1, pp.7-15. ⟨10.4000/philosophiascientiae.1232⟩. ⟨hal-04507543⟩