Publications

Affichage de 5441 à 5450 sur 16090


  • Article dans une revue

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, A. Vivier, Christophe Gaquière, B. Boudart

Solid-State Electronics, 2017, 127, pp.13 - 19. ⟨10.1016/j.sse.2016.10.039⟩. ⟨hal-01646143⟩

  • Communication dans un congrès

Wireless monitoring system for lightweight aircraft landing gear

Christophe Delebarre, Sébastien Grondel, Samuel Dupont, F Rouvarel, M Yoshida

Mass repartition onboard lightweight aircraft is a crucial problem as it may generate difficulties for the pilot during the landing phase. Being able for the pilot to land the plane properly is of course an important aspect for safety, but also for structure integrity. So the mass repartition…

18th International Conference on Research and Education in Mechatronics (REM 2017), Sep 2017, Wolfenbuettel, Germany. pp.1-6, ⟨10.1109/REM.2017.8075230⟩. ⟨hal-03549288⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/4]

Raffaele Pisano

2017. ⟨hal-04511010⟩

  • Article dans une revue

International Summer School, Lille Report

Raffaele Pisano

Viewpoint, 2017, 110 (6), pp.13-14. ⟨hal-04509329⟩

  • Article dans une revue

3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes

Encarnación Torralba, Mathieu Halbwax, Taha El Assimi, Marin Fouchier, Vincent Magnin, Joseph Harari, Jean-Pierre Vilcot, Sylvain Le Gall, Raphaël Lachaume, Christine Cachet-Vivier, Stéphane Bastide

A novel strategy to achieve 3D pattern transfer into silicon in a single step without using lithography is presented. Etching is performed electrochemically in HF media by contacting silicon with a positively biased, patterned, metal electrode. Dissolution is localized at the Si/metal contacts and…

Electrochemistry Communications, 2017, 76, pp.79-82. ⟨10.1016/j.elecom.2017.01.014⟩. ⟨hal-01480682⟩