Publications
Affichage de 5651 à 5660 sur 16092
Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Cédric Lacam, Piero Gamarra, Hichem Ben-Ammar, Marie-Pierre Chauvat, Magali Noelle Valerie Morales, Pierre Ruterana
Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs . EMRS Fall Meeting, Sep 2016, Varsovie, Poland. ⟨hal-01641574⟩
Influence of plasma treatments and Sn incorporation on Ga2O3 properties
Alban Maertens, Samuel Margueron, Frédéric Genty, Adulfas Abrutis, Thierry Belmonte, Pascal Boulet, Jaafar Ghanbaja, Abdelkrim Talbi, Ausrine Bartasyte
E-MRS fall meeting 2016, Sep 2016, Varsovie, Poland. ⟨hal-01371975⟩
Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching
Stéphane Bastide, Encarnacion Torralba-Penalver, Christine Cachet-Vivier, Sylvain Le Gall, Raphaël Lachaume, Mathieu Halbwax, Vincent Magnin, Joseph Harari, Jean-Pierre Vilcot
E-MRS fall meeting 2016, Materials Research Society, Sep 2016, Varsovie, Poland. ⟨hal-01579541⟩
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress
Hadhemi Lakhdhar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert
ESREF 2016, Sep 2016, Händel-Halle, Germany. ⟨hal-02462684⟩
Electrical Bragg band gaps in piezoelectric plates with a periodic array of electrodes
Clement Vasseur, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus, Anne-Christine Hladky, Mai Pham Thi
2016 IEEE International Ultrasonics Symposium (IUS), Sep 2016, Tours, France. paper P3-C2-7, 4 p., ⟨10.1109/ULTSYM.2016.7728624⟩. ⟨hal-03299395⟩
Time-domain modeling of non-contact surface wave NDT system and its experimental validation
Ji Li, Bogdan Piwakowski, L. Li
Proceedings of 2016 IEEE International Ultrasonics Symposium, IUS 2016, Sep 2016, Tours, France. ⟨hal-03587028⟩
Event detection in sensor networks with non-linear amplifiers via mixture series expansion
Pengfei Zhang, Ido Nevat, Gareth W. Peters, Laurent Clavier
IEEE Sensors Journal, 2016, 16 (18), pp.6939-6946. ⟨10.1109/JSEN.2016.2592103⟩. ⟨hal-03270111⟩
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
G. Mugny, F.G. Pereira, D. Rideau, F. Triozon, Y.M. Niquet, M. Pala, D. Garetto, C. Delerue
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩. ⟨hal-02065220⟩
Physics-based electrical compact model for monolayer Graphene FETs
Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy
Solid-State Device Research Conference (ESSDERC), 2016 46th European, Sep 2016, Lausanne, Switzerland. ⟨10.1109/ESSDERC.2016.7599630⟩. ⟨hal-01399868⟩
Measurement and analysis of arc tracking characteristics in the high frequency band
Virginie Degardin, L. Koné, Pierre Laly, M. Lienard, Pierre Degauque, F. Valensi
2016 IEEE AUTOTESTCON, Sep 2016, Anaheim, United States. pp.Session 2D1 - Prognostics and Health Monitoring 1, 153-158, ⟨10.1109/AUTEST.2016.7589591⟩. ⟨hal-03514491⟩