Publications

• Article dans une revue

Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor

M. Alimoradi Jazi, V. Janssen, W. Evers, A. Tadjine, C. Delerue, L. Siebbeles, H. van Der Zant, A. Houtepen, D. Vanmaekelbergh

Nano Letters, 2017, 17 (9), pp.5238-5243. ⟨10.1021/acs.nanolett.7b01348⟩. ⟨hal-02906808⟩

• Article dans une revue

Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

A. Massoud, J.-M. Bluet, V. Lacatena, M. Haras, J.F. Robillard, Pierre-Olivier Chapuis

By thermally characterizing nanometer-thin suspended silicon membranes with various micrometric lengths in ambient conditions, we determine simultaneously the spatial resolution of our Wollaston-probe scanning thermal microscopy experiment, which probes an area of (285 nm)²,…

Applied Physics Letters, 2017, 111 (6), pp.063106. ⟨10.1063/1.4997914⟩. ⟨hal-02025076⟩

• Article dans une revue

Tailoring phonon band structures with broken symmetry by shaping spatiotemporal modulations of stiffness in a one-dimensional elastic waveguide

Pierre Deymier, Vitthal Gole, Pierre Lucas, Jerome O. Vasseur, Keith Runge

Spatiotemporal modulations of the elastic properties of materials can be used to break time and parity symmetry of elastic waves. We show that the form of the elastic band structure depends not only on the spatial and temporal periodicity of a spatiotemporal modulation but also on its shape through…

Physical Review B, 2017, 96 (6), ⟨10.1103/PhysRevB.96.064304⟩. ⟨hal-03305046⟩

• Brevet

Convertisseur d'énergie à effet tunnel

Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

États-Unis, N° de brevet: US9722166 (B2) 2017-08-01. 2017, N° de priorité : FR20120050497 20120118 - N° de demande : US201313741201 20130114. ⟨hal-05696565⟩

• Article dans une revue

Capacity Bounds for Additive Symmetric $\alpha $ -Stable Noise Channels

Mauro de Freitas, Malcolm Egan, Laurent Clavier, Alban Goupil, Gareth W. Peters, Nourddine Azzaoui

IEEE Transactions on Information Theory, 2017, 63 (8), pp.5115-5123. ⟨10.1109/TIT.2017.2676104⟩. ⟨hal-02088563⟩

• Article dans une revue

Anthraquinone modification of microporous carbide derived carbon films for on-chip micro-supercapacitors applications

Kévin Brousse, C. Martin, A.L. Brisse, C. Lethien, Patrice Simon, Pierre-Louis Taberna, T. Brousse

The modification of carbide derived carbon (CDC) thin film electrodes with anthraquinone (AQ) molecules was demonstrated by using pulsed chronoamperometry, in 0.1 M NEt4BF4/ACN solution of AQ diazonium derivative. The functionalization of CDC electrodes was only possible when a critical pore size…

Electrochimica Acta, 2017, 246, pp.391 - 398. ⟨10.1016/j.electacta.2017.06.037⟩. ⟨hal-01623096⟩

• Article dans une revue

High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

Ezgi Dogmus, Riad Kabouche, Astrid Linge, Etienne Okada, Malek Zegaoui, F Medjdoub

Physica Status Solidi A (applications and materials science), 2017, 214 (8), pp.1600797. ⟨10.1002/pssa.201600797⟩. ⟨hal-03028465⟩

• Article dans une revue

Comparative study of 2D‐OCDMA‐WDM system performance in 40‐Gb/s PON context

Hichem Mrabet, Iyad Dayoub, Rabah Attia

IET Optoelectronics, 2017, 11 (4), pp.141-147. ⟨10.1049/iet-opt.2016.0142⟩. ⟨hal-03508931⟩

• Article dans une revue

Unipolar and Bipolar High-Magnetic-Field Sensors Based on Surface Acoustic Wave Resonators

V. Polewczyk, K. Dumesnil, D. Lacour, M. Moutaouekkil, H. Mjahed, Nicolas Tiercelin, S. Petit-Watelot, H. Mishra, Yannick Dusch, S. Hage-Ali, O. Elmazria, F. Montaigne, Abdelkrim Talbi, Olivier Bou Matar, Michel Hehn

While surface acoustic wave (SAW) sensors have been used to measure temperature, pressure, strains, and low magnetic fields, the capability to measure bipolar fields and high fields is lacking. In this paper, we report magnetic surface acoustic wave sensors that consist of interdigital transducers…

Physical Review Applied, 2017, 8 (2), ⟨10.1103/PhysRevApplied.8.024001⟩. ⟨hal-01686932⟩

• Article dans une revue

Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al_0.45 Ga_0.55N barrier layer

Ahmed Chakroun, Abdelatif Jaouad, Meriem Bouchilaoun, Osvaldo Arenas, Ali Soltani, Hassan Maher

In this work, we report on the fabrication of a normally‐off AlGaN/GaN Metal–Oxide–Semiconductor High Electron Mobility Transistor (MOS‐HEMT) using an ultra‐thin Al0.45Ga0.55N barrier layer. The AlGaN barrier was thinned down to 1 nm using a digital etching process (Oxidation/Etching) and was…