Publications

Affichage de 5691 à 5700 sur 16104


  • Article dans une revue

Capacity analysis of an IEEE 802.11n system in a residential house based on estimated specular and dense multipath components

Emmeric Tanghe, Davy Gaillot, David Plets, Wout Joseph, M. Lienard, Wim de Ketelaere, Luc Martens

IET Microw. Antennas Propag., 2017, 11, pp.1671-1675. ⟨10.1049/iet-map.2016.0798⟩. ⟨hal-03346238⟩

  • Communication dans un congrès

Non-destructive Evaluation of Containment Walls in Nuclear Power Plants

V. Garnier, C. Payan, M. Lott, Narintsoa Ranaivomanana, Jean-Paul Balayssac, Jérôme Verdier, E. Larose, Y. Zhang, J. Saliba, A. Boniface, Z. M. Sbartai, Bogdan Piwakowski, Charles Ciccarone, H. Hafid, J. M. Henault, F. Ouvrier Buffet

Two functions are regularly tested on containment walls in order to anticipate a possible accident. The first is mechanical to resist a possible internal over-pressure and the second is to prevent leakage. The AAPR reference accident is the rupture of a pipe in the primary circuit of a nuclear…

43rd Review of Progress in Quantitative Nondestructive Evaluation, Jul 2016, Atlanta, United States. pp.UNSP 080018--1, ⟨10.1063/1.4974643⟩. ⟨hal-01847558⟩

  • Article dans une revue

Antifouling biomimetic liquid-infused stainless steel: application to rairy industrial processing

Sawsen Zouaghi, Thierry Six, Séverine Bellayer, Sona Moradi, Savvas G. Hatzikiriakos, Thomas Dargent, V. Thomy, Yannick Coffinier, Christophe Andre, Guillaume Delaplace, Maude Jimenez

Fouling is a widespread and costly issue, faced by all food-processing industries. Particularly, in the dairy sector, where thermal treatments are mandatory to ensure product safety, heat-induced fouling represents up to 80% of the total production costs. Significant environmental impacts, due the…

ACS Applied Materials & Interfaces, 2017, 9 (31), pp.26565-26573. ⟨10.1021/acsami.7b06709⟩. ⟨hal-02622108⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩