Publications

Affichage de 5731 à 5740 sur 16261


  • Ouvrages

Functionalized Nanomaterials for the Management of Microbial Infection: A Strategy to Address Microbial Drug Resistance

Rabah Boukherroub, Sabine Szunerits, Djamel Drider

2017, 032341625X. ⟨hal-04549110⟩

  • Article dans une revue

Nonlinear secondary noise sources for passive defect detection using ultrasound sensors

Lynda Chehami, Emmanuel Moulin, Julien de Rosny, Claire Prada, Eric Chatelet, Giovanna Lacerra, Konstantinos Gryllias, Francesco Massi

This paper introduces the concept of secondary noise sources for passive defect detection and localization in structures. The proposed solution allows for the exploitation of the principle of Green's function reconstruction from noise correlation, even in the absence of an adequate ambient…

Journal of Sound and Vibration, 2017, 386, pp.283 - 294. ⟨10.1016/j.jsv.2016.10.006⟩. ⟨hal-01835485⟩

  • Brevet

Substrat microstructuré

Christophe Lethien, Pascal Tilmant, Etienne Eustache, Nathalie Rolland, Thierry Brousse

Japon, N° de brevet: JP2017500211 (A) 2017-01-05. 2017, N° de priorité : FR20130059717 20131007 - N° de demande : JP20160520666 20141002. ⟨hal-05661705⟩

  • Article dans une revue

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Stéphane Lenfant, Yannick Viero, Christophe Krzeminski, Dominique Vuillaume, Dora Demeter, I. L. Dobra, Maiténa Oçafrain, Philippe Blanchard, Jean Roncali, C. van Dick, Jérôme Cornil

We report the electron-transport properties of a new photoaddressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and, hence, the electronic properties of an oligothiophene chain can be reversibly modified by…

Journal of Physical Chemistry C, 2017, 121 (22), pp.12416-12425. ⟨10.1021/acs.jpcc.7b01240⟩. ⟨hal-02564470⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩