Publications

Affichage de 591 à 600 sur 15872


  • Poster de conférence

Microstructure et Propriétés Piézoélectriques Mesurées aux Echelles Macroscopique et Nanométrique de Couches Minces de Ba<sub>0,85</sub>Ca<sub>0,15</sub>Ti<sub>0,9</sub>Zr<sub>0,1</sub>O<sub>3</sub> (BCTZ) Déposées par Ablation Laser Pulsé sur Différents Substrats pour la Récupération d’Energie

Marie-Hélène Chambrier, Donovan Ledru, Moustapha Azankoud, Renaud Valois, Guillaume Demily, Ilham Hamdi Alaoui, Françoise Le Marrec, Nathalie Lemée, Freddy Ponchel, Denis Remiens, Antonio Da Costa, Anthony Ferri, Rachel Desfeux

  • Communication dans un congrès

Blockchain-Enabled Defense Mechanism for Protecting Federated Learning Systems Against Malicious Node Updates

Adil Attiaoui, Abdellatif Kobbane, Jamal Elhachmi, Marwane Ayaida, Khalid Chougdali

This paper aims to investigate the convergence of Federated Learning (FL) and Blockchain technology to enhance the security and robustness of machine learning systems. As the utilization of mobile devices grows, managing the complexities of unbalanced and non-independent data becomes imperative.…

2024 4th Interdisciplinary Conference on Electrics and Computer (INTCEC), Jun 2024, Chicago, United States. pp.1-6, ⟨10.1109/INTCEC61833.2024.10602881⟩. ⟨hal-04677301⟩

  • Communication dans un congrès

Event-Driven Neural Network for Ultra-Low-Power On-Chip Keyword Spotting

Marc Chevalier, Benoit Larras, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053939⟩

  • Poster de conférence

Carrier density analysis in stressed n-doped GaN on sapphire layers

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

GaN Marathon 2024, Jun 2024, Verona, Italy. 2024. ⟨hal-05054677⟩

  • Communication dans un congrès

Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

Using micro-Raman spectroscopy on MOCVD slightly n-doped GaN on sapphire structures (1.5 x 10$^{15}$ cm$^{-3}$ – 6.5 x 10$^{15}$ cm$^{-3}$), we report a method to dissociate biaxial stress contribution from n carrier concentration contribution in A1(LO) Raman peak position. For all characterized…

GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩

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