11th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2015, Nov 2015, Chengdu, China. pp.1-4, ⟨10.1109/ASICON.2015.7517018⟩. ⟨hal-04088243⟩

Article dans une revue

Transport properties of multigrained nanocomposites with imperfect interfaces

Pier Luca Palla, Stefano Giordano

Journal of Applied Physics, 2016, 120 (18), 184301, 9 p. ⟨10.1063/1.4967316⟩. ⟨hal-03407507⟩

Article dans une revue

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon…

Journal of Applied Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩

Communication dans un congrès

Modeling transistor level masking of soft errors in combinational circuits

Ihsen Alouani, Smail Niar, Yassin El Hillali, Atika Rivenq

Technology scaling in modern electronic circuits shrinks the transistor size and dramatically increases the sensitivity of semiconductor devices to radiations. Consequently, soft errors emerged as a serious reliability threat in both sequential and combinational circuits. To accurately estimate…

2015 IEEE East-West Design and Test Symposium, EWDTS 2015, Sep 2015, Batumi, United States. pp.7493140, ⟨10.1109/EWDTS.2015.7493140⟩. ⟨hal-03528693⟩

Communication dans un congrès

65 nm SOI CMOS 60 GHz passive mixer for six-port technology

Kamel Haddadi, Christophe Loyez

This work describes the design and measurements of a 60 GHz passive mixer for six-port applications operating and implemented in a 65nm SOI CMOS technology. The mixer topology, consisting only of a n-MOS cold-FET and CPW transmission line matching networks, avoids the use of coupler in front of the…

IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016, Jan 2016, Austin, TX, United States. pp.52-55, ⟨10.1109/WISNET.2016.7444320⟩. ⟨hal-03224660⟩

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Investigations on the mechanical properties of the elementary thin films composing a CuIn1−xGaxSe2 solar cell using the nano indentation technique.

Hocine Abib, Alain Iost, Alex Montagne, Khadidja Rahmoun, Boubakeur Ayachi, Jean-Pierre Vilcot

The aim of this work is to assess the mechanical properties of the different layers composing a CIGS based solar cell. Fabrication uses the magnetron sputtering deposition technique (except for the CdS layer which was deposited using chemical bath deposition process). We performed several…

Thin Solid Films, 2016, pp.1-5. ⟨10.1016/j.tsf.2016.11.013⟩. ⟨hal-03166870⟩

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Growth of c -Axis-Oriented BiCuSeO Thin Films Directly on Si Wafers

Xiaolin Wu, Linjie Gao, Pascal Roussel, El Hadj Dogheche, Jianglong Wang, Guangsheng Fu, Shufang Wang

Single-phase, c-axis-oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. X-ray diffraction pole figure confirms that the film does not have any ab-plane texture, whereas cross-sectional…

Journal of the American Ceramic Society, 2016, 99 (10), pp.3367-3370. ⟨10.1111/jace.14359⟩. ⟨hal-02263699⟩

Article dans une revue

Improved Performance of YIG (Y3Fe5O12) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%…