Publications

Affichage de 6241 à 6250 sur 16273


  • Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

  • Article dans une revue

Polarimetric distance-dependent models for large hall scenarios

Shiqi Cheng, Davy Gaillot, Emmeric Tanghe, Pierre Laly, Thierry Demol, Wout Joseph, Luc Martens, M. Lienard

IEEE Transactions on Antennas and Propagation, 2016, 64, pp.1907-1917. ⟨10.1109/TAP.2016.2535100⟩. ⟨hal-03346250⟩

  • Communication dans un congrès

InAs/Al<sub>0.4</sub>Ga<sub>0.6</sub>Sb side gated vertical TFET on GaAs substrate

Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque

  • Article dans une revue

AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications

Ouarda Legrani, Thierry Aubert, Omar Elmazria, Ausrine Bartasyte, Pascal Nicolay, Abdelkrim Talbi, Pascal Boulet, Jaafar Ghanbaja, Denis Mangin

Recent studies have evidenced that Pt/AlN/Sapphire SAW devices are promising for high-temperature high-frequency applications. However, they cannot be used above 700°C in air atmosphere as the Pt interdigital transducers (IDTs) agglomerate and the AlN layer oxidizes in such conditions. In this…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2016, 63 (6), pp.898 - 906. ⟨10.1109/TUFFC.2016.2547188⟩. ⟨hal-01525494⟩

  • Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩

  • Communication dans un congrès

Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Emmanuel Dubois, Justine Philippe, Matthieu Berthomé, J.F. Robillard, Christophe Gaquière, Francois Danneville, Daniel Gloria, Christine Raynaud

Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and…

6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩. ⟨hal-03272693⟩