Publications

• Poster de conférence

Comparison of InxGa1-xN/GaN single and multiple quantum well based PIN structures : fabrication and characterization

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Gilles Patriache, Abderrahim Ramdane, Didier Decoster, El Hadj Dogheche

European Materials Research Society Spring Meeting, E-MRS Spring 2015, May 2015, Lille, France. ⟨hal-03780894⟩

• Poster de conférence

«Top-down fabrication of lead-free La₂Ti₂O₇ piezoelectric nanostructures»

A. Ferri, S. Saitzek, Z. Shao, A. Bayart, G. Declercq, J. Costecalde, D. Deresmes, David Troadec, Denis Remiens, R. Desfeux

European Materials Research Society Spring Meeting, E-MRS Spring 2015, May 2015, Lille, France. paper N.PI.30, 2015. ⟨hal-01727650⟩

• Communication dans un congrès

Nanoselective area growth of high quality thick InGaN/GaN on sacrificial ZnO templates

Renaud Puybaret, Suresh Sundaram, Xin Li, Youssef El Gmili, Konstantinos Pantzas, David Troadec, Gilles Patriarche, David Rogers, Ferechteh Hosseini Teherani, Eric Vinod Sandana, Philippe Bove, Paul L Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden

EMR Spring Meeting, May 2015, Lille, France. ⟨hal-01257054⟩

• Poster de conférence

Piezoelectrical properties of Pt/Pb(Zr0.53Ti0.47)O3 (PZT) structure deposited on ITO coeted silicon and glass substrates

Laid Kerkache, El Hadj Dogheche, Abdelhamid Layadi, Denis Remiens

In order to offer an alternative to existing piezoelectric thin films materials structures, we have developed the synthesis of lead zirconate titanate Pb(Zr0.53Ti0.47)O3 (PZT) thin films onto indium-tin-oxide (ITO) coated corning 7059 glass and silicon substrates using an r.f. sputtering deposition…

European Materials Research Society Spring Meeting, E-MRS Spring 2015, May 2015, Lille, France. paper H-17P.29. ⟨hal-03842623⟩

• Communication dans un congrès

On-wafer probe station for microwave metrology at the nanoscale

A. El Fellahi, Kamel Haddadi, J. Marzouk, S. Arscott, Christophe Boyaval, T. Lasri, Gilles Dambrine

2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), May 2015, Pisa, Italy. pp.1960-1964, ⟨10.1109/I2MTC.2015.7151582⟩. ⟨hal-02345596⟩

• Communication dans un congrès

Wavelength characterisation of the double interaction in tellurium dioxide

Jean-Claude Kastelik, Anthony Dieulangard, Samuel Dupont, Joseph Gazalet

International Congress on Ultrasonics, ICU 2015, May 2015, Metz, France. ⟨hal-03549588⟩

• Poster de conférence

Photons and phonons coupling in piezoelectric periodic structure cavities

Samuel Dupont, Quentin Rolland, Joseph Gazalet, Jean-Claude Kastelik

International Congress on Ultrasonics, ICU 2015, May 2015, Metz, France. ⟨hal-03549658⟩

• Communication dans un congrès

A History of Science of Weights

Raffaele Pisano

Sympossium-Roundtable on the History and Philosophy of science Islam and Science: a Living Heritage Achievements in classical Islam and contemporary challenges of world science, Department of Languages and Cultures Unity of Arab and Islamic Studies, Ghent University, May 2015, Ghent, Belgium. ⟨hal-04518533⟩

• Article dans une revue

Sub-fF 130 nm MOS Varactor Characterization using 6 . 8 GHz Interferometry-based Reflectometer

Pietro Maris Ferreira, Cora Donche, Ambroise Delalin, Thomas Quémerais, Daniel Gloria, Tuami Lasri, Gilles Dambrine, Christophe Gaquière

Nanometer-scaled communication devices for microwave and millimeter wave applications motivated innovative techniques in modeling and characterization. In this letter, an interferometry-based reflectometer (IBR), comprising Vector Network Analyser (VNA) and commercial devices, is implemented. Using…

IEEE Microwave and Wireless Components Letters, 2015, 25 (6), pp.418 - 420. ⟨10.1109/LMWC.2015.2421326⟩. ⟨hal-01217908⟩

• Communication dans un congrès

Application of Nitride based Semiconductors to High-speed Optoelectronics

Bandar Alshehri, Karim Dogheche, El Hadj Dogheche

III-nitrides materials are very promising ternary alloy system that receives a lot of attentions thanks to theirs tunable bandgap that varies from near infrared to near ultraviolet regions. Until now, InGaN/GaN materials have been widely used in various applications like high efficiency solar cells…

KAUST-IEMN Workshop on Nanotechnology & Photonics, May 2015, Thuwal, Saudi Arabia. ⟨hal-03780888⟩