Publications

Affichage de 6581 à 6590 sur 16231


  • Article dans une revue

Theoretical and experimental analyses of tunable Fabry-Perot resonators using piezoelectric phononic crystals

Marie-Fraise Ponge, Bertrand Dubus, Christian Granger, Jerome O. Vasseur, Mai Pham Thi, Anne-Christine Hladky

Theoretical and experimental analyses of piezoelectric stacks submitted to periodical electrical boundary conditions via electrodes are conducted. The presented structures exhibit Bragg band gaps that can be switched on or off by setting electrodes in short or open circuit. The band gap frequency…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2015, 62 (6), pp.1114-1121. ⟨10.1109/TUFFC.2014.006919⟩. ⟨hal-03300133⟩

  • Communication dans un congrès

Experimental Study of Multilayer Piezo-magnetic SAW Delay Line for Magnetic Sensor

Meriem Elhosni, Sébastien Petit-Watelot, Michel Hehn, Sami Hage-Ali, Keltouma Ait Aissa, Daniel Lacour, Abdelkrim Talbi, Omar Elmazria

<div><p>This communication describes an experimental study of multilayer piezo-magnetic acoustic wave devices used as sensors of external magnetic fields applied in plane, parallel or perpendicular to the direction of the acoustic wave propagation direction. The considered device…

Eurosensors 2015, Sep 2025, Freiburg (Allemagne), France. pp.870 - 873, ⟨10.1016/j.proeng.2015.08.743⟩. ⟨hal-05415947⟩

  • Communication dans un congrès

Initial 75-110 GHz indoor propagation measurements

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Molina-Garcia-Pardo, Jose-Victor Rodriguez, Lorenzo Rubio, Leandro Juan-Llacer

2015 IEEE International Symposium on Antennas and Propagation & North American Radio Science Meeting, AP-S/URSI 2015, Jul 2015, Vancouver, BC, Canada. session WE-A4.5A - Propagation for Millimeter-Wave Communications, paper WE-A4.5A.4, 1013-1014, ⟨10.1109/APS.2015.7304894⟩. ⟨hal-03346234⟩

  • Communication dans un congrès

When capacitive transduction meets the thermomechanical limit: Towards femto-newton force sensors at very high frequency

S. Houmadi, Bernard Legrand, J.P. Salvetat, B. Walter, E. Mairiaux, J.P. Aime, D. Ducatteau, P. Merzeau, L. Buisson, J. Elezgaray, Didier Theron, Marc Faucher

We show that the capacitive transduction of a MEMS device using a setup based on a microwave detection scheme achieves the measurement of the thermomechanical noise spectrum of a high-frequency (>10 MHz) high-stiffness (>10 5 N/m) resonator, reaching the outstanding displacement resolution of…

28th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2015, Jan 2015, Estoril, Portugal. ⟨10.1109/MEMSYS.2015.7050908⟩. ⟨hal-01962374⟩

  • Communication dans un congrès

0.69 THz room temperature heterodyne detection using GaN nanodiodes

Carlos Daher, Jeremie Torres, Ignacio Iñiguez-De-La-Torre, Philippe Nouvel, Luca Varani, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, Javier Mateos, And Tomás González

GaN-based asymmetric nanodiodes have been used as heterodyne detectors up to 0.69 THz in free-space configuration where Intermediate Frequency bandwidth has been measured up 13 GHz. Monte Carlo simulations, used to estimate nano-device intrinsic conversion losses of 27 dB have confirmed these…

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 2015, Salamanca, Spain. ⟨10.1088/1742-6596/647/1/012006⟩. ⟨hal-01920765⟩

  • Communication dans un congrès

Characterization of flexible CMOS technology tranferred onto a metallic foil

Justine Philippe, Aurelien Lecavelier Des Etangs-Levallois, Philip Latzel, Francois Danneville, J.F. Robillard, Daniel Gloria, Emmanuel Dubois

In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 mu m and bond onto a 25-mu m-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100 degrees C with an applied pressure of 1.2 bar.…

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063747⟩. ⟨hal-03272691⟩