Publications

• Communication dans un congrès

A GaN Schottky diode-based analog phase shifter MMIC

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, Dimitris Pavlidis

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in…

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩

• Article dans une revue

Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Fabian Schulz, Robert Drost, Sampsa K. Hämäläinen, Thomas Demonchaux, Ari P. Seitsonen, Peter Liljeroth

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to templating growth of molecular layers. We have studied the structure of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (23), pp.2354293. ⟨10.1103/PhysRevB.89.235429⟩. ⟨hal-01044795⟩

• Article dans une revue

Experimental determination of temperature-dependent electron-electron collision frequency in isochorically heated warm dense gold

C. Fourment, F. Deneuville, D. Descamps, F. Dorchies, S. Petit, O. Peyrusse, B. Holst, V. Recoules

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (16), ⟨10.1103/PhysRevB.89.161110⟩. ⟨hal-01561840⟩

• Communication dans un congrès

Broadband sound shielding of Lamb waves through a periodic array of junctions

R.P. Moiseyenko, Yan Pennec, R. Marchal, B. Bonello, Bahram Djafari-Rouhani

We study theoretically sub-wavelength physical phenomena such as resonant transmission and broadband sound shielding for Lamb waves propagating in an acoustic metamaterial made of a thin plate drilled with one or two row(s) of rectangular holes. One of the main results is the demonstration of a…

2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014, Aug 2014, Copenhagen, Denmark. pp.100-102, ⟨10.1109/MetaMaterials.2014.6948609⟩. ⟨hal-03508189⟩

• Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Article dans une revue

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for BST films and ex situ for PST films. In order to improve the crystalline…

International Journal of Materials Engineering Innovation, 2014, 5 (4), pp.327. ⟨10.1504/IJMATEI.2014.066857⟩. ⟨hal-03525889⟩

• Communication dans un congrès

Microscopie champ proche micro-ondes pour la caractérisation de liquides

Sijia Gu, Kamel Haddadi, Tuami Lasri

Une plate-forme de microscopie champ proche micro-ondes pour la caractérisation de liquides est proposée. La technique est basée sur l'association d'un analyseur de réseau micro-ondes et d'une sonde coaxiale évanescente. Le principe du système proposé est basé sur le développement d…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020399⟩

• Article dans une revue

Limitations of the impulse response of GaAs MSM photoswitch

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin

As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor…

International Journal of Advances in Engineering and Technology, 2014, 7, pp.75-81. ⟨hal-00955229⟩

• Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based…

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩