Publications

Affichage de 6631 à 6640 sur 16109


  • Poster de conférence

Contribution au champ électromagnétique dans une chambre réverbérante à brassage de modes (CRBM) au voisinage des parois

A.I. Ibrahim, S. Baranowski, L. Kone, A.I. Idriss

3èmes Journées Interdisciplinaires “Modernités et Traditions”, Session Physique et Electronique, Feb 2014, Djibouti, Djibouti. ⟨hal-03564071⟩

  • Communication dans un congrès

Chemically improved high performance solution processed indium gallium zinc oxide thin-film transistors

Mohammed Benwadih, Dominique Vuillaume, Romain Coppard

10th International Thin-Film Transistor Conference, ITC 2014, Jan 2014, Delft, Netherlands. ⟨hal-00957807⟩

  • Communication dans un congrès

Photo-assisted growth of semiconductor nanostructures in silica matrices

Bruno Capoen, Hicham El Hamzaoui, Odile Cristini-Robbe, Remy Bernard, Laurent Bigot, Antoine Le Rouge, A. Chahadih, Christophe Kinowski, Mohamed Bouazaoui

1st International Symposium on Nanoparticles/Nanomaterials and Applications, Jan 2014, Lisbonne, Portugal. ⟨hal-01117526⟩

  • Communication dans un congrès

Tunable Antennas Using MEMS Switches for LTE Mobile Terminals

Aykut Cihangir, Fabien Ferrero, Cyril Luxey, G. Jacquemod, Emmanuel Larique, Renaud Robin, Patrice Brachat

Two antenna designs, using MEMS switches for operating band reconfigurability are presented in this paper. The study has been carried out in the scope of ARTEMOS project, whose main target is to propose tunable architectures for future mobile terminals. For this purpose, two antenna designs to…

9th Loughborough Antennas and Propagation Conference (LAPC), Nov 2013, Loughborough, United Kingdom. pp.22-26. ⟨hal-01347426⟩

  • Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

  • Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is…

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

  • Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩