Publications

Affichage de 6701 à 6710 sur 16104


  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Article dans une revue

Narrow linewidth tunable terahertz radiation by photomixing without servo-locking

Antoine Rolland, Guillaume Ducournau, Gwennaël Danion, Goulc'Hen Loas, Marc Brunel, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tashin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, François Bondu, Marc Vallet, Pascal Szriftgiser, Denis Bacquet, Mehdi Alouini

A beatnote, tunable from dc to 1 THz, provided by a dual-frequency laser is used to feed an unitravelling carrier photodiode in order to produce a highly coherent THz signal radiated by a transverse-electromagnetic-horn antenna. The THz signal is detected and analyzed by a subharmonic mixer coupled…

IEEE Transactions on Terahertz Science and Technology, 2014, 4 (2), pp.260-266. ⟨10.1109/TTHZ.2013.2296144⟩. ⟨hal-00941862⟩

  • Communication dans un congrès

Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, A. Soussou, I. Duchemin, D. Garetto, C. Tavernier, H. Jaouen, Christophe Delerue

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩

  • Communication dans un congrès

Characterization of multi-layered nanopore structure

Xiaokun Ding, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensly, Yujun Song, Alexey Klimov

Hybridization of nanostructures opens new avenues for the synthesis of nano-architectures with multi-function and novel physicochemical properties. In this paper, we developed nanosphere template assisted physical vapor deposition to fabricate ordered multi-layered nanostructures utilizing Ag/…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020258⟩