Publications

Affichage de 6741 à 6750 sur 16179


  • Communication dans un congrès

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Bandar Alshehri, S.-M. Lee, J.-H. Kang, Karim Dogheche, S.-H. Gong, S.-W. Ryu, E. Dumont, Y.-H. Cho, El Hadj Dogheche

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961412⟩

  • Communication dans un congrès

[Invité] Emergence des ISFETs 0D : un nouvel outil pour la récupération d'énergie et la détection de bio-molécules uniques

Nicolas Clément

6ème Réunion Plénière du GdR Nanofils, 2014, Toulouse, France. ⟨hal-01055041⟩

  • Communication dans un congrès

Conductance switching by light and electric field in new azobenzene derivatives-gold nano-particle self-assembled networks (NPSAN)

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume, Dora Demeter, Philippe Blanchard, Jean Roncali

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055037⟩

  • Communication dans un congrès

[Invited] Surface science of semiconductor nanowires

B. Grandidier

International Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia. ⟨hal-01044671⟩

  • Communication dans un congrès

Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications

Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, Emmanuelle Pichonat, Dominique Vignaud, Henri Happy

To synthesize monolayer graphene and realize defect free transfer for electronic devices application are still challenges. In this letter, we present the fabrication and characterization of graphene field effect transistor (GFET), with respect to key parameters of graphene growth on Cu by chemical…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, May 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018384⟩