Publications

• Communication dans un congrès

Electrical and chemical studies on Al2O3 passivation activation process

Matthieu Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, D. Aureau, A. Etcheberry, A. Slaoui, T. Schutz-Kuchly, R. Cabal

Passivation process is a key feature to improve the efficiency of silicon solar cells. So far, a 20nm-thick layer of Al2O3 grown by Plasma Enhanced Atomic Layer Deposition (PE-ALD) followed by a 450°C anneal during 15 to 30 min gives the best results in surface carrier recombination velocities on p…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964247⟩

• Communication dans un congrès

Key parameters of silicon micropillar arrays for solar cell performance optimization

Di Zhou, Yan Pennec, Bahram Djafari-Rouhani, Odile Cristini, Tao Xu, Yannick Lambert, Didier Stiévenard

Surface nanostructuration is an important challenge for the optimization of light trapping design in solar cell. We present simulations of the optical properties and efficiency of nanostructured (micropilars-MPs- or nanocones-NCs-) silicon based solar cells as well as measurements of their optical…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964078⟩

• Article dans une revue

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, Peter Frijlink, Marc Rocchi, Hassan Maher

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and…

IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩

• Article dans une revue

Fabrication of superhydrophobic and highly oleophobic silicon-based surfaces via electroless etching method

Thi Phuong Nhung Nguyen, Renaud Dufour, Vincent Thomy, Vincent Senez, Rabah Boukherroub, Yannick Coffinier

This study reports on a simple method for the preparation of superhydrophobic and highly oleophobic nanostructured silicon surfaces. The technique relies on metal-assisted electroless etching of silicon in sodium tetrafluoroborate (NaBF4) aqueous solution. Then, silver particles were deposited on…

Applied Surface Science, 2014, 295, pp.38-43. ⟨10.1016/j.apsusc.2013.12.166⟩. ⟨hal-00946706⟩

• Article dans une revue

On the origin of increased sensitivity and mass resolution using silicon masks in MALDI

Laurent Diologent, Julien Franck, Maxence Wisztorski, A. Treizebre, Cristian Focsa, Isabelle Fournier, Michael Ziskind

Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one…

Analytical Chemistry, 2014, 86, pp.1404-1413. ⟨10.1021/ac401329r⟩. ⟨hal-00946711⟩

• Article dans une revue

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

E. Lefebvre, G. Moschetti, M. Malmkvist, L. Desplanque, X. Wallart, J. Grahn

The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have…

Semiconductor Science and Technology, 2014, 29, 035010, 7p. ⟨10.1088/0268-1242/29/3/035010⟩. ⟨hal-00941533⟩

• Communication dans un congrès

Digital radio frequency signal generation towards ultimate transmitters

Antoine Frappé

This invited paper exposes our latest developments in the field of digital transmitters by focusing on digital and mixed-signal processing blocks, such as delta-sigma modulators, high-speed interpolation filters and digital-to-RF converters. The goal is to demonstrate that radio-frequency signal…

2014 International Symposium on Fundamentals of Electrical Engineering (ISFEE), Nov 2014, Bucharest, Romania. pp.1-5, ⟨10.1109/ISFEE.2014.7050563⟩. ⟨hal-03377050⟩

• Communication dans un congrès

Mesure des coefficients de réflexion et de transmission de panneaux en cuve acoustique - Etude comparative de différentes méthodes

Christian Granger, C. Audoly

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. ⟨hal-00978399⟩

• Communication dans un congrès

Fabrication et caractérisation DC de composant HEMTs In(Ga)AlN/GaN sur silicium

Léon-Thierry Okala, Marie Lesecq, Philippe Altuntas, Jean-Claude de Jaeger

Cet article présente un procédé de fabrication de transistors HEMTs InAlN/GaN et AlGaN/GaN, en lithographie optique, sur substrat Si(111). Les mesures de Hall et TLM ont permis d'évaluer la résistance de contact, la résistance carrée, la mobilité et la densité de porteurs. La caractérisation…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020314⟩

• Communication dans un congrès

A 1D optomechanical crystal with a complete phononic band gap

Jordi Gomis-Bresco, Daniel Navarro Urrios, Mourad Oudich, Said El-Jallal, Amadeu Griol, Daniel Puerto, Emigdio Chávez-Ángel, Yan Pennec, Bahram Djafari-Rouhani, Francesc Alzina, Alejandro Martinez, Clivia Sotomayor-Torres

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015239⟩