Publications

Affichage de 6861 à 6870 sur 16279


  • Proceedings/Recueil des communications

Note su Scienza e Tecnica (Notes on Science and Technique)

Raffaele Pisano, Danilo Capecchi

Proceedings of 27th and 29th annual SISFA Conferences Societá Italiana degli Storici della Fisica e dell'Astronomia, Aracne, pp.115-124, 2014, 978-88-548-7206-6. ⟨10.4399/978885487206610⟩. ⟨hal-04512964⟩

  • Communication dans un congrès

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Philippe Altuntas, N. Defrance, Marie Lesecq, Alain Agboton, Rezki Ouhachi, Etienne Okada, Christophe Gaquière, Jean-Claude de Jaeger, Éric Frayssinet, Yvon Cordier

This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps…

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩. ⟨hal-03276914⟩

  • Communication dans un congrès

Electrolyte-gated organic synapse-transistor for biocompatible applications

Dominique Vuillaume, Simon Desbief, Adrica Kyndiah, Mauro Murgia, Tobias Cramer, Fabio Biscarini, David Guérin, Stéphane Lenfant

10th International Conference on Organic Electronics, ICOE 2014, 2014, Modena, Italy. ⟨hal-00999995⟩

  • Communication dans un congrès

On the mechanical and electronic properties of alkylthiolated Au nanocrystals

Nicolas Clément, K. Smaali, S. Desbief, G. Foti, T. Frederiksen, D. Sanchez-Portal, A. Arnau, Jean-Philippe Nys, P. Leclere, Dominique Vuillaume

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055035⟩

  • Communication dans un congrès

Electrolyte-gated organic/nanoparticles synapstor (synapse-transistor) for biocompatible synapse prosthesis

Simon Desbief, Adrica Kyndiah, Mauro Murgia, Tobais Cramer, Fabio Biscarini, David Guérin, Stéphane Lenfant, F. Alibart, Dominique Vuillaume

We have recently demonstrated how we can use charge trapping/detrapping in an array of gold nanoparticules (NPs) at the SiO2/pentacene interface to design a SYNAPSTOR (synapse transistor) mimicking the dynamic plasticity of a biological synapse. This device (memristor-like) mimics short-term…

Materials Research Society Spring Meeting, MRS Spring 2014, Symposium Z - Bioelectronics - Materials, Processes and Applications, Symposium AA - Advanced Multifunctional Biomaterials for Neuroprosthetic Interfaces, 2014, San Francisco, CA, United States. ⟨hal-00957804⟩

  • Article dans une revue

Control of the ionization state of three single donor atoms in silicon

B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, Christophe Delerue, Silvano de Franceschi, M. Sanquer

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, pp.161404. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩

  • Communication dans un congrès

Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometry

Efterpi Kalesaki, Mark Pieter Boneschanscher, Jaco J. Geuchies, Christophe Delerue, Cristiane Morais Smith, Wiel H. Evers, Guy Allan, Thomas Altantzis, Sara Bals, Daniel Vanmaekelbergh

The interest in 2-dimensional systems with a honeycomb lattice and related Dirac-type electronic bands has exceeded the prototype graphene. We show that atomically coherent honeycomb superlattices of rocksalt (PbSe, PbTe) and zincblende (CdSe, CdTe) semiconductors can be obtained by nanocrystal…

SPIE Photonics West, OPTO 2014, Conference 8981 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 2014, San Francisco, CA, United States. ⟨10.1117/12.2042882⟩. ⟨hal-00964400⟩