Publications

• Communication dans un congrès

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, B. Grandidier

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of…

SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩. ⟨hal-00974539⟩

• Communication dans un congrès

Electrical and chemical studies on Al2O3 passivation activation process

Matthieu Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, D. Aureau, A. Etcheberry, A. Slaoui, T. Schutz-Kuchly, R. Cabal

Passivation process is a key feature to improve the efficiency of silicon solar cells. So far, a 20nm-thick layer of Al2O3 grown by Plasma Enhanced Atomic Layer Deposition (PE-ALD) followed by a 450°C anneal during 15 to 30 min gives the best results in surface carrier recombination velocities on p…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964247⟩

• Communication dans un congrès

Etude de réseaux diffuseurs pour l'acoustique sous-marine

Y. Renou, P. Constant, C. Audoly, Christian Granger

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. ⟨hal-00978404⟩

• Communication dans un congrès

Développement de capteurs interdigités souples pour le contrôle de structures

Rafatou Takpara, Dame Fall, Marc Duquennoy, Christian Courtois, Mohamed Rguiti, Laurent Seronveaux, D. Monnoye, Gregory Martic, Véronique Lardot, M. Gonon, N. Maury, Christine Pelegris, M. Guessasma, N. Ferguen, E. Bellenger

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUS2-2 : Contrôles et essais non-destructifs II, papier CFA2014/327, 536-539. ⟨hal-00978411⟩

• Communication dans un congrès

Ion-beam effect on functional properties of La2Ti2O7 piezoelectric thin films and nanoislands

A. Ferri, S. Saitzek, Z. Shao, A. Bayart, G. Declercq, Jean Costecalde, Denis Remiens, D. Deresmes, David Troadec, Rachel Desfeux

Low-dimensional material can display unique physical phenomena allowing an interesting way for the development of new technologies. In addition, owing the environmental requirements about electronic devices (ferroelectric memories, M/NEMS...), new lead-free piezoelectrics need to be created. In…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, 2014, Lille, France. ⟨hal-00964120⟩

• Article dans une revue

Feasibility of a high bit rate power line communication between an inverter and a motor

Virginie Degardin, Khaled Kilani, Lamine Koné, M. Lienard, Pierre Degauque

In the aerospace domain, more electrical aircraft will have to face a drastic issue in the future, in relation to an increase in the number of wires and connectors, which impact weight and system reliability. A possible solution could be using power-line communications (PLC). In this paper, we…

IEEE Transactions on Industrial Electronics, 2014, 61, pp.4816-4823. ⟨10.1109/TIE.2013.2293697⟩. ⟨hal-00969137⟩

• Communication dans un congrès

Key parameters of silicon micropillar arrays for solar cell performance optimization

Di Zhou, Yan Pennec, Bahram Djafari-Rouhani, Odile Cristini, Tao Xu, Yannick Lambert, Didier Stiévenard

Surface nanostructuration is an important challenge for the optimization of light trapping design in solar cell. We present simulations of the optical properties and efficiency of nanostructured (micropilars-MPs- or nanocones-NCs-) silicon based solar cells as well as measurements of their optical…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964078⟩

• Article dans une revue

High reference impedance reflectometer for nonresonant matching of near-field microwave microscope tip probe

D. Glay, A. El Fellahi, T. Lasri

In this letter, we present a nonresonant high impedance reflectometer integrating a tip probe dedicated to near-field microwave microscopy. A 1-kohms reflectometer is fabricated by using lumped elements to validate the approach proposed to solve the problem of impedance mismatch between the probe…

Microwave and Optical Technology Letters, 2014, 56, pp.64-69. ⟨10.1002/mop.28018⟩. ⟨hal-00939056⟩

• Article dans une revue

An SVD-aided efficient bit-loading algorithm for MIMO transmission over spatially correlated channels

Imade Fatani, Marie Zwingelstein, Mohamed Gharbi, François-Xavier Coudoux, Marion Berbineau, Marc G. Gazalet

This paper proposes an efficient bit-loading algorithm for Multiple-Input- Multiple-Output transmission over spatially correlated channels with perfect Channel State Information at both link ends. Based onwater-filling principle, the algorithm does not assume the well-known gap approximation and…

Wireless Personal Communications, 2014, 75, pp.1167-1185. ⟨10.1007/s11277-013-1414-3⟩. ⟨hal-00954476⟩

• Article dans une revue

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

E. Lefebvre, G. Moschetti, M. Malmkvist, L. Desplanque, X. Wallart, J. Grahn

The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have…

Semiconductor Science and Technology, 2014, 29, 035010, 7p. ⟨10.1088/0268-1242/29/3/035010⟩. ⟨hal-00941533⟩