Publications

Affichage de 7041 à 7050 sur 16271


  • Article dans une revue

Focusing capability of a phononic crystal based on a hollow metallic structure

Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Lionel Haumesser, Andrew N. Norris

The dispersion curves of a phononic crystal (PC) based on a hollow metallic structure are presented. They exhibit a negative refraction dispersion branch and perfect refractive index matching with the surrounding water, leading to focusing capability. Numerical and experimental results are reported…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2014, 61, pp.1314-1321. ⟨10.1109/TUFFC.2014.3038⟩. ⟨hal-01056961⟩

  • Proceedings/Recueil des communications

Note sulle Fortificazioni nei Quesiti di Tartaglia. Libro Sesto e sua Gionta (Notes on Fortifications in the Tartaglia Questions. Book Sixth and his Gionta)

Raffaele Pisano

Proceedings of the 5th History of Engineering Conference, II, Cuzzolin, pp.815-825, 2014, 978-88-87479-11-9. ⟨hal-04517933⟩

  • Article dans une revue

[Invited] Ultrathin barrier GaN-on-silicon devices for millimeter wave applications

F Medjdoub

Microelectronics Reliability, 2014, 54, pp.1-12. ⟨10.1016/j.microrel.2013.11.009⟩. ⟨hal-00923934⟩

  • Communication dans un congrès

Decision feedback equalization with channel dependent power consumption for 60GHz receivers

Ilias Sourikopoulos

Doctoriales Lille Nord de France 2014, 2014, Marcq-en-Baroeul, France. ⟨hal-00986878⟩

  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

  • Communication dans un congrès

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Mathieu Danoy, Pierre-François Angry, Julien Gavrel, Charlène Brillard, L. Desplanque, Y. Wang, P. Ruterana, Xavier Wallart

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally,…

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. ⟨hal-00992670⟩

  • Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

  • Proceedings/Recueil des communications

Lavoisier and Sadi Carnot. Chemical–and–Physical Sciences as Dating Back to Two Survived Scientific Revolutions: 1789 And 1824

Raffaele Pisano, Rémi Franckowiak

Proceedings of the 9th International Organizing Science Technology Education – IOSTE symposium for Central and Eastern Europe - University of Hradec Králové, Gaudeamus Králové, pp.42-54, 2014, 978-80-7435-416-8. ⟨hal-04512994⟩