Publications

• Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

• Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

• Article dans une revue

Focusing capability of a phononic crystal based on a hollow metallic structure

Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Lionel Haumesser, Andrew N. Norris

The dispersion curves of a phononic crystal (PC) based on a hollow metallic structure are presented. They exhibit a negative refraction dispersion branch and perfect refractive index matching with the surrounding water, leading to focusing capability. Numerical and experimental results are reported…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2014, 61, pp.1314-1321. ⟨10.1109/TUFFC.2014.3038⟩. ⟨hal-01056961⟩

• Communication dans un congrès

Improved wet chemical transfer process to obtain clean high quality graphene

Geetanjali Deokar, Jean-Louis Codron, Emmanuelle Pichonat, Xavier Wallart, Henri Happy, Dominique Vignaud

Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization requires a clean and reproducible graphene transfer on non-conducting substrates,…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961392⟩

• Communication dans un congrès

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Bandar Alshehri, S.-M. Lee, J.-H. Kang, Karim Dogheche, S.-H. Gong, S.-W. Ryu, E. Dumont, Y.-H. Cho, El Hadj Dogheche

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961412⟩

• Article dans une revue

Dispersion characteristic of ultrathin terahertz planar lenses based on metasurface

Dan Hu, Gabriel Moreno, Xinke Wang, Jingwen He, Abdallah Chahadih, Zhenwei Xie, Bo Wang, Tahsin Akalin, Yan Zhang

Terahertz (THz) radiation has attached a lot of attention due to its potential applications. The smart optical components will greatly boost the application of the THz technology. Ultrathin planar lenses which can greatly reduce the thickness of the components are designed and fabricated in the THz…

Optics Communications, 2014, 322, pp.164-168. ⟨10.1016/j.optcom.2014.02.017⟩. ⟨hal-00961382⟩

• Communication dans un congrès

Enhanced efficiency by the effect of strain on the structure of a solar cell

Abdelkader Aissat, Rachid Bestam, M. El Bey, Jean-Pierre Vilcot

This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher…

International Conference on Technologies and Materials for Renewable Energy, Environment and Sustainability, TMREES14, 2014, Beirut, Lebanon. pp.817-823, ⟨10.1016/j.egypro.2014.06.100⟩. ⟨hal-01055040⟩

• Communication dans un congrès

Conductance switching by light and electric field in new azobenzene derivatives-gold nano-particle self-assembled networks (NPSAN)

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume, Dora Demeter, Philippe Blanchard, Jean Roncali

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055037⟩

• Communication dans un congrès

[Invité] Emergence des ISFETs 0D : un nouvel outil pour la récupération d'énergie et la détection de bio-molécules uniques

Nicolas Clément

6ème Réunion Plénière du GdR Nanofils, 2014, Toulouse, France. ⟨hal-01055041⟩

• Communication dans un congrès

Application of nodal discontinuous Galerkin finite element method for 2D nonlinear elastic wave propagation

Yifeng Li, Jingjing Wang, Olivier Bou Matar

In order to solve the elastic wave equation in heterogeneous media with arbitrary high order accuracy in space on unstructured meshes, a nodal Discontinuous Galerkin Finite Element Method (DG-FEM) is presented, which combines the geometrical flexibility of the Finite Element Method and strongly…

21st International Congress on Sound and Vibration, ICSV 21, 2014, Beijing, China. paper 688, 8 p. ⟨hal-01055076⟩