Publications

Affichage de 7091 à 7100 sur 16279


  • Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based…

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩

  • Communication dans un congrès

A GaN Schottky diode-based analog phase shifter MMIC

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, Dimitris Pavlidis

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in…

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩

  • Communication dans un congrès

Investigations into the dynamical properties of graphene on Ir(111)

Michael Endlich, Henrique Miranda, Alejandro Molina-Sanchez, Ludger Wirtz, Jörg Kröger

European Workshop on Epitaxial Graphene and 2D Materials, EWEG/2D 2014, 2014, Primosten, Croatia. ⟨hal-01009965⟩

  • Communication dans un congrès

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

Mohamed Moez Belhaj, Wei Wei, Emiliano Pallecchi, Colin Mismer, Isabelle Roch-Jeune, Henri Happy

This letter introduces radio frequency(RF) characterization of ink-jet printed coplanar waveguides (CPW) with and without strain. Kapton is selected as flexible substrate with different sintering temperature. With optimized inkjet printing parameters, well defined patterns with high resolution…

44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014, Oct 2014, Rome, Italy. pp.1528-1531, ⟨10.1109/EuMC.2014.6986740⟩. ⟨hal-03335828⟩

  • Communication dans un congrès

3D micro-supercapacitor based on MnO2 electrodes on silicon substrate

Etienne Eustache, Camille Douard, Pascal Tilmant, Dmitri Yarekha, Laurence Morgenroth, Christophe Lethien, Thierry Brousse

226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico. ⟨hal-01015285⟩

  • Proceedings/Recueil des communications

Note su Scienza e Tecnica (Notes on Science and Technique)

Raffaele Pisano, Danilo Capecchi

Proceedings of 27th and 29th annual SISFA Conferences Societá Italiana degli Storici della Fisica e dell'Astronomia, Aracne, pp.115-124, 2014, 978-88-548-7206-6. ⟨10.4399/978885487206610⟩. ⟨hal-04512964⟩

  • Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have…

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩