joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015277⟩

Article dans une revue

Thermal management of electronic devices by composite materials integrated in silicon

Emmanuel Ollier, U. Soupremanien, V. Remondiere, J. Dijon, H. Le Poche, A.L. Seiler, F. Lefevre, S. Lips, Christophe Kinkelin, Nathalie Rolland, Paul-Alain Rolland, Malek Zegaoui, S. Lhostis, P. Ancey, B. Descouts, Y. Kaplan

As the power of electronic systems is increasing, thermal fluxes are getting higher, up to more than 100 W/cm2 in the more critical cases. They result in hot spots with various consequences, especially performance reduction and reliability issues. Most of the prior research has been focused on…

Microelectronic Engineering, 2014, 127, pp.28-33. ⟨10.1016/j.mee.2014.03.016⟩. ⟨hal-01005617⟩

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Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Charfeddine, M. Gassoumi, H. Mejri, Christophe Gaquière, Bertrand Grimbert, M.A. Zaidi, H. Maaref

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition…

Sensors & Transducers., 2014, 27, pp.277-279. ⟨hal-01005128⟩

Communication dans un congrès

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

4th International Meeting on Dielectric Materials, May 2013, Marrakech, Morocco. ⟨hal-03659197⟩

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S. Arscott

Lab on a Chip, 2014, 14 (19), pp.3896. ⟨10.1039/C4LC90090A⟩. ⟨hal-02345645⟩

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Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

M. Braccini, F. Volpi, Arnaud Devos, G. Raymond, D. Benoit, Pascal Morin

Highly stressed silicon nitride thin films are used in gate first complementary metal oxide semiconductors to improve mobility in the silicon channel. Compressive stresses improve hole mobility in p-type MOS transistors while tensile stresses increase electron mobility in n-type MOS devices. High…

Thin Solid Films, 2014, 551, pp.120-126. ⟨10.1016/j.tsf.2013.11.012⟩. ⟨hal-00925380⟩

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Phononic engineering of silicon using "dots on the fly" e-beam lithography and plasma etching

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

Nowadays, the interest in reducing the lattice thermal conductivity (kL), without affecting the electrical one (ke), represents one of the main objectives for researchers in thermoelectricity. In semiconductors, lattice vibrations contribute about 95% to thermal conductivity. Because phonons and…

Microelectronic Engineering, 2014, 121, pp.131-134. ⟨10.1016/j.mee.2014.04.034⟩. ⟨hal-00994777⟩

Communication dans un congrès

Sputtered thin films for lithium ion microbatteries: recent results on TiN lithium barrier diffusion layer, Au negative and C-LiFePO4 positive electrodes

Etienne Eustache, Jeremy Freixas, Olivier Crosnier, Pascal Tilmant, Dmitri Yarekha, Pascal Roussel, Nathalie Rolland, Thierry Brousse, Christophe Lethien

226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico. ⟨hal-01015287⟩