Publications

• Article dans une revue

Ingénierie des matériaux artificiels électromagnétiques : cristaux photoniques et métamatériaux

D. Lippens

Le développement des techniques de micro-structuration des matériaux diélectriques et des composés métalliques permet actuellement un contrôle sans précédent de l'interaction des ondes électromagnétiques avec les matériaux artificiels. Nous illustrons ici l'ingénierie de telles structures…

Photoniques, 2014, 69, pp.31-34. ⟨10.1051/photon/20146931⟩. ⟨hal-00954473⟩

• Article dans une revue

Finite element analysis and experimental study of surface acoustic wave propagation through two-dimensional pillar-based surface phononic crystal

S. Yankin, Abdelkrim Talbi, Y. Du, Jean-Claude Gerbedoen, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar

We study both theoretically and experimentally the interaction of surface elastic waves with 2D surface phononic crystal (PnC) on a piezoelectric substrate. A rigorous analysis based on 3D finite element method is conducted to calculate the band structure of the PnC and to analyze the transmission…

Journal of Applied Physics, 2014, 115, 244508, 7 p. ⟨10.1063/1.4885460⟩. ⟨hal-01018303⟩

• Article dans une revue

Surface asymmetry of coated spherical nanoparticles

Amélie H.R. Koch, Gaëtan Lévêque, Sebastian Harms, Karmena Jaskiewicz, Max Bernhardt, Andreas Henkel, Carsten Sönnichsen, Katharina Landfester, George Fytas

We validate the nonspherical grafting arrangement of isotropically coated spherical nanoparticles as very recently proposed. We utilize localized surface plasmon resonance enhanced dynamic polarized and depolarized light scattering from Au nanoparticles, the spherical symmetry of which was revealed…

Nano Letters, 2014, 14, pp.4138-4144. ⟨10.1021/nl501783x⟩. ⟨hal-01044850⟩

• Article dans une revue

Control of the ionization state of three single donor atoms in silicon

B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, Christophe Delerue, Silvano de Franceschi, M. Sanquer

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, pp.161404. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩

• Communication dans un congrès

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩

• Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

• Communication dans un congrès

CIGSe absorber layers deposition by single target magnetron sputtering

R. Meunier, S. Fabert, M. Ricci, P.Y. Thoulon, Thomas Aviles, Jean-Pierre Vilcot, Alain Lafond, Michèle Carette, Pierre-Yves Jouan, Marie-Paule Besland

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964175⟩

• Article dans une revue

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull…

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• Autre publication scientifique

Etude d'un système de localisation 3-D haute précision basé sur les techniques de transmission ULB à basse consommation d'énergie pour les objets mobiles communicants

Kobenan Ignace Kossonou

2014. ⟨hal-00994836⟩

• Article dans une revue

Diffusion based kinetic selectivity modulation of enzymatic proteolysis in a microfluidic reactor : experimental analysis and stochastic modeling

Adil Elagli, Simon Laurette, A. Treizebre, Bertrand Bocquet, Renato Froidevaux

Microreactors enable new experimental ways for enzyme engineering. In this context, we show that the liquid-liquid parallel laminar flows in microchannels cause a kinetic selectivity modification of proteolytic enzymatic reaction involving hemoglobin and pepsin, reaction that generates numerous…

RSC Advances, 2014, 4, pp.3873-3882. ⟨10.1039/C3RA46005C⟩. ⟨hal-00922402⟩