Publications

Affichage de 7231 à 7240 sur 16263


  • Communication dans un congrès

Caractérisation des propriétés élastiques du PZT déposé en couches minces par acoustique picoseconde

F. Casset, Arnaud Devos, A. Le Louarn, P. Emery, G. Le Rhun, S. Fanget, E. Defay

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUS2-2 : Contrôles et essais non-destructifs II, papier CFA2014/208, 530-534. ⟨hal-00978406⟩

  • Article dans une revue

Electrical properties of lead-free KNN films on SRO/STO by RF magnetron sputtering

T. Li, G.S. Wang, K. Li, G. Du, Y. Chen, Z.Y. Zhou, Denis Remiens, X.L. Dong

Ceramics International, 2014, 40, pp.1195-1198. ⟨10.1016/j.ceramint.2013.07.005⟩. ⟨hal-00903762⟩

  • Article dans une revue

On the Jesuit Edition of Newton’s Principia. Science and Advanced Researches in the Western Civilization

Paolo Bussotti, Raffaele Pisano

Advances in Historical Studies, 2014, 03 (01), pp.33-55. ⟨10.4236/ahs.2014.31005⟩. ⟨hal-04507865⟩

  • Communication dans un congrès

Fabrication of integrated micrometer platform for thermoelectric measurements

Maciej Haras, V. Lacatena, François Morini, J.F. Robillard, S. Monfray, T. Skotnicki, Emmanuel Dubois

60th Annual IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. paper 8.5, 8.5.1-8.5.4, ⟨10.1109/IEDM.2014.7047012⟩. ⟨hal-03325009⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩