Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

Communication dans un congrès

Silicon nanotweezers inside liquid for the real time characterization of DNA degradation under radiotherapy treatment

Grégoire Perret, T. Lacornerie, V. Kumemura, N. Lafitte, H. Guillou, L. Jalabert, E. Lartigau, T. Fujii, Fabrizio Cleri, H. Fujita, Dominique Collard

Tumor cell killing by γ-ray beams in radiotherapy is currently based on a rather empirical understanding of the basic mechanisms and effectiveness of DNA damage by radiation. On the other hand, the mechanical behavior of DNA, e.g., sequence-sensitivity, elastic vs. plastic response, is well…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00966166⟩

Article dans une revue

Control of the ionization state of three single donor atoms in silicon

B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, Christophe Delerue, Silvano de Franceschi, M. Sanquer

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, pp.161404. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩

Communication dans un congrès

Effects of deposition parameters on the composition of Cu(In,Ga)Se2 thin films deposited by magnetron pulsed DC sputtering

Thomas Aviles, Jean-Pierre Vilcot

Industrial Cu(In,Ga)Se2 (CIGS) thin films formation process generally require two steps : 1) Cu-In-Ga precursors deposition 2) crystallization under selenium atmosphere (H2Se). Unfortunately, hydrogen selenide is very hazardous, being the most toxic selenium compound. Nevertheless, recent works…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964159⟩