Publications

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩. ⟨hal-00997378⟩

• Communication dans un congrès

Terahertz sensing of supercooled glycerol using a 1D photonic crystal

Juraj Sibik, Hynek Nemec, Christelle Kadlec, Filip Kadlec, Vladimir Skoromets, Karine Blary, J. Axel Zeitler, Petr Kužel

We have developed a 1D photonic crystal that can be used for sensing purposes at terahertz frequencies and which requires less then one microliter of sample material. Using this sensor we have obtained temperature dependent measurements of refractive index and extinction coefficient of glycerol in…

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper TH8-4, 2 p., ⟨10.1109/IRMMW-THz.2013.6665911⟩. ⟨hal-00914233⟩

• Communication dans un congrès

[Invité] Etat de l'art et défis du GaN pour l'électronique

Raphaël Aubry, Yvon Cordier, Jean-Claude de Jaeger, Nicolas Grandjean, M. Rocchi, Paul-Laurent Saunier, Fabrice Semond, Jean-Guy Tartarin

14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, Table ronde, 2013, Evian, France. ⟨hal-00878877⟩

• Communication dans un congrès

Optimisation de cellules solaires. Vers une diminution de l'€/Watt

Matthieu Pawlik

Doctoriales Lille Nord de France 2013, 2013, Marcq-en-Baroeul, France. ⟨hal-00966096⟩

• Autre publication scientifique

Réalisation et caractérisation de transistors HEMTs GaN pour des applications dans le domaine millimétrique

Samira Bouzid-Driad

2013. ⟨hal-00919597⟩

• Communication dans un congrès

Nanoscale transport measurements with multiple probe scanning tunneling microscopy

Maxime Berthe, Corentin Durand, R. Leturcq, B. Grandidier

Development of nanometer-sacle probing techniques have become imperative for current flow and resistivity measurements with nanometer scale spatial resolution in a variety of materials and devices. The use of weakly coupled scanning tunneling probes to detect transport phenomena appears to be an…

16th International Congress of Metrology, 2013, Paris, France. S20 Nanotechnology, 13001, 4 p., ⟨10.1051/metrology/201313001⟩. ⟨hal-00877775⟩

• Ouvrages

The Dialectic Relation Between Physics and Mathematics in the XIXth Century

Evelyne Barbin, Raffaele Pisano

Springer Netherlands, 16, 2013, 978-94-007-5379-2. ⟨10.1007/978-94-007-5380-8⟩. ⟨hal-04517737⟩

• Article dans une revue

Lifetimes of Confined Acoustic Phonons in Ultra-Thin Silicon Membranes

John Cuffe, Emigdio Chávez, Pierre-Olivier Chapuis, Francesc Alzina, Oliver Ristow, Andrey Shchepetov, Mike Hettich, Thomas Dekorsy, Clivia M. Sotomayor Torres, Mika Prunnila, Jouni Ahopelto

We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultra-thin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time of the first-order dilatational mode decreases…

Physical Review Letters, 2013, 110 (9), pp.095503. ⟨10.1103/PhysRevLett.110.095503⟩. ⟨hal-00732483⟩

• Communication dans un congrès

Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy

M. Suri, D. Garbin, O. Bichler, D. Querlioz, D. Vuillaume, C. Gamrat, B. de Salvo

9th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, 2013, New-York, NY, United States. pp.140-145, ⟨10.1109/NanoArch.2013.6623059⟩. ⟨hal-00877744⟩

• Article dans une revue

Analytical modeling and analysis of AlmGa1-mN/GaN HEMTs employing both field-plate and high-k dielectric stack for high-voltage operation

M. Kaddeche, A. Telia, A. Soltani

Journal of Computational Electronics, 2013, 12, pp.501-510. ⟨10.1007/s10825-013-0468-5⟩. ⟨hal-00872008⟩