Publications

Affichage de 7301 à 7310 sur 16553


  • Communication dans un congrès

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

Ali Soltani, Abdelkrim Talbi, J-C Gerbedoen, Jean-Claude de Jaeger, Philippe Pernod, V. Mortet, A. Bassam

In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth…

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. pp.2047-2050, ⟨10.1109/ULTSYM.2014.0510⟩. ⟨hal-03276910⟩

  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Chapitre d'ouvrage

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic

Emmanuel Dubois, Aurelien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Yoann Tagro, Francois Danneville, J.F. Robillard, Christine Raynaud, Daniel Gloria, Jacek Ratajczak

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'. Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014. ⟨hal-04249256⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'.…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩